The high power impulse magnetron sputtering (HiPIMS) discharge is a recent addition to plasma based sputtering technology. In HiPIMS, high power is applied to the magnetron target in unipolar pulse ...

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High power impulse magnetron sputtering discharge

Dynamic self-organization phenomena in complex ionized gas systems: new paradigms and technological aspects

The influence on thin film density using high power impulse magnetron sputtering (HIPIMS) has been investigated for eight different target materials (Al, Ti, Cr. Cu, Zr, Ag, Ta, and Pt). The densit ...

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On the film density using high power impulse magnetron sputtering

The results of numerical simulations, optical emission spectroscopy (OES), and quadrupole mass spectrometry (QMS) of inductively coupled Ar/CH4/H2 plasmas in the plasma enhanced chemical vapor deposition (PECVD) of self-assembled vertically aligned carbon nanostructures (CNs) are presented. A spatially averaged (global) discharge model is developed to study the densities and fluxes of the radical neutrals and charged species, the effective electron temperature, methane conversion factor under various growth conditions. The numerical results show a remarkable agreement with the OES and QMS data. It is found that the deposited cation fluxes in the PECVD of CNs generally exceed those of the radical neutrals.

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Inductively coupled Ar/CH4/H2 plasmas for low-temperature deposition of ordered carbon nanostructures

High Power Impulse Magnetron Sputtering (HiPIMS) is a coating technology that combines magnetron sputtering with pulsed power concepts. By applying power in pulses of high amplitude and a relatively low duty cycle, large fractions of sputtered atoms and near-target gases are ionized. In contrast to conventional magnetron sputtering, HiPIMS is characterized by self-sputtering or repeated gas recycling for high and low sputter yield materials, respectively, and both for most intermediate materials. The dense plasma in front of the target has the dual function of sustaining the discharge and providing plasma-assistance to film growth, affecting the microstructure of growing films. Many technologically interesting thin films are compound films, which are composed of one or more metals and a reactive gas, most often oxygen or nitrogen. When reactive gas is added, non-trivial consequences arise for the system because the target may become “poisoned,” i.e., a compound layer forms on the target surface affecting the sputtering yield and the yield of secondary electron emission and thereby all other parameters. It is emphasized that the target state depends not only on the reactive gas' partial pressure (balanced via gas flow and pumping) but also on the ion flux to the target, which can be controlled by pulse parameters. This is a critical technological opportunity for reactive HiPIMS (R-HiPIMS). The scope of this tutorial is focused on plasma processes and mechanisms of operation and only briefly touches upon film properties. It introduces R-HiPIMS in a systematic, step-by-step approach by covering sputtering, magnetron sputtering, reactive magnetron sputtering, pulsed reactive magnetron sputtering, HiPIMS, and finally R-HiPIMS. The tutorial is concluded by considering variations of R-HiPIMS known as modulated pulsed power magnetron sputtering and deep-oscillation magnetron sputtering and combinations of R-HiPIMS with superimposed dc magnetron sputtering.

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Tutorial: Reactive high power impulse magnetron sputtering (R-HiPIMS)

The behavior of argon plasmas driven by time modulated power in ‘‘high density’’ plasma reactors is investigated using a global model. The time evolution of the electron temperature and the plasma density is calculated by solving the particle and energy balance equations. In the first stage of power application during the ‘‘on’’ time, the electron temperature rapidly increases above the steady state value. In this region, charged particles accumulate in the plasma due to the relatively higher power applied than for the continuous wave (cw) case. In the first stage of the ‘‘off’’ time, the electron temperature drops quickly, yielding a smaller particle loss (Bohm) velocity. These effects give rise to higher time‐average plasma densities than for the cw plasma driven by the same average power. The highest average plasma density obtained was more than twice the density of the cw plasma for a duty ratio of 25%. Even higher plasma densities were obtained for shorter duty ratios. The possibility of controlling chemical reactions in the plasma by changing the modulation period is also shown.

C. Lee

Papers

Spatially averaged (global) model of time modulated high density argon plasmas