Beam combining of laser arrays with high efficiency and good beam quality for power and radiance (brightness) scaling is a long-standing problem in laser technology. Recently, significant progress has been made using wavelength (spectral) techniques and coherent (phased array) techniques, which has led to the demonstration of beam combining of a large semiconductor diode laser array (100 array elements) with near-diffraction-limited output (M/sup 2//spl sim/1.3) at significant power (35 W). This paper provides an overview of progress in beam combining and highlights some of the tradeoffs among beam-combining techniques.

Laser beam combining for high-power, high-radiance sources

The objective of this paper is to present an overview of topics related to one of the fundamental parameters for semiconductor lasers-the linewidth broadening factor α that describes the coupling between carrier-concentration-induced variations of real and imaginary parts of susceptibility. After introducing the definition of α and discussing its dependence on carrier concentration, photon energy, and temperature, we give a short historical summary on how the concept of α evolved over the past two decades. This is followed by a discussion of α dependence on device structure in gain-guided and subdimensional lasers (quantum wells and quantum wires). The bulk of the paper is devoted to a detailed review of laser properties influenced by α and of associated methods of estimating the value of α. Results of measurements reported to date are collected and the most reliable methods are indicated.

Linewidth broadening factor in semiconductor lasers--An overview

We discuss a number of theoretical and experimental issues in quantum well lasers with emphasis on the basic behavior of the gain, the field spectrum, and the modulation dynamics It is revealed that the use of quantum well structures results in improvement of these properties and brings several new concepts to optical semiconductor devices

/pdf/quantum-well-lasers-gain-spectra-dynamics-3gftmp6esb.pdf

Quantum well lasers--Gain, spectra, dynamics

A new coupled mode formulation for parallel dielectric waveguides is described. The results apply to any guided modes (TE, TM, or hybrid) in waveguides of arbitrary cross-section, dissimilar index, and nonidentical shape. Additional index perturbations not included within the waveguides are encompassed by the theory. Propagation constants and mode patterns for the coupled modes computed according to this theory are shown to agree very well with numerical solutions for the system modes when the latter can be determined. Moreover, the new results are more accurate than those obtained from prior coupled mode formulations. It is shown that even for Iossless guides the coupling coefficients from waveguide "b" to "a" and from "a" to "b," described by k ab and k ba respectively, are not related by their complex conjugates if the guides are not identical.

Coupled mode theory of parallel waveguides

The optical characteristics of phase-locked semiconductor laser arrays are formulated in terms of the array supermodes, which are the eigenmodes of the composite-array waveguide, by using coupled-mode theory. These supermodes are employed to calculate the near fields, the far fields, and the difference in the longitudinal-mode oscillation wavelengths of the array. It is shown that the broadening in the far-field beam divergence, as well as the broadening of each of the longitudinal modes that were observed in phase-locked arrays, may arise from the excitation of an increasing number of supermodes at increasing pumping levels.

/pdf/supermode-analysis-of-phase-locked-arrays-of-semiconductor-ww8atzerim.pdf

Supermode analysis of phase-locked arrays of semiconductor lasers

Parallel-coupled waveguide semiconductor lasers

Lasing characteristics of semiconductor laser arrays incorporating separate contacts

Phased arrays of semiconductor lasers are potentially able to combine the outputs of the individual array elements into a single narrow diffraction-limited beam, thus providing much higher beam power densities than may be obtained from a single semiconductor laser.1 Most arrays reported to date have been uniform arrays in which all elements of the array have been identical. Such arrays almost invariably show double-lobed far-field patterns whose angular divergence is often several times the diffraction limit.1

C. Lindsey

Papers

Parallel-coupled waveguide semiconductor lasers

Lasing characteristics of semiconductor laser arrays incorporating separate contacts

Tailored gain phased array of semiconductor lasers with single-lobed far-field pattern