The present invention provides a method of extracting the parasitic capacitance of an SOI (Silicon-On-Insulator) substrate. The method includes the following steps that: a front end structure is provided, wherein the front end structure includes a substrate and a functional layer arranged above the substrate at intervals; the functional layer is projected onto the substrate; a region where the functional layer is projected onto the substrate is obtained; and capacitance is calculated according to the region. At present, a parasitic capacitance parameter extracted by a tool is largely differentfrom an actually measured value, and as a result, the accuracy of subsequent circuit design would be affected. According to the method provided by the present invention, the functional layer is projected onto the substrate, and the capacitance value of the region where the functional layer is projected onto the substrate is calculated; and therefore, the defects of an existing parasitic capacitance extraction tool can be eliminated, the parasitic capacitance parameter extracted by the method of the invention is approximately equal to the actually measured value, and an entire design flow fromthe extraction of the parasitic parameter to simulation is smoother.

Method for extracting parasitic capacitance of SOI (Silicon-On-Insulator) substrate

The invention provides an extraction method of a parasitic RC network. The method comprises the following steps: acquiring a layout comprising multiple devices; defining an auxiliary layer in the layout; defining the parasitic RC region in the auxiliary layer; establishing a connection relation between the parasitic RC region and a port of the device; extracting the parasitic resistor and the parasitic capacitor in the parasitic RC region, and computing the parameters of the parasitic resistor and the parasitic capacitor. In the extraction method provided by the invention, the parasitic impedance in a substrate is extracted, and the accuracy of the circuit design is improved.

Cao Yun

Papers

Extraction method of parasitic RC network