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Chan Hoe Ku

Researcher at Electronics and Telecommunications Research Institute

Publications -  5
Citations -  161

Chan Hoe Ku is an academic researcher from Electronics and Telecommunications Research Institute. The author has contributed to research in topics: Pentacene & Thin-film transistor. The author has an hindex of 5, co-authored 5 publications receiving 154 citations. Previous affiliations of Chan Hoe Ku include Kyung Hee University.

Papers
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Journal ArticleDOI

Novel organic inverters with dual-gate pentacene thin-film transistor

Jae Bon Koo, +4 more
- 01 Oct 2007 - 
TL;DR: In this article, dual-gate pentacene organic thin-film transistors (OTFTs) with bottom-gate and top-gate dielectric were fabricated using PEALD Al2O3 gate dielectrics.
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The Effects of Surface Treatment on Device Performance in Pentacene-based thin Film Transistor

Jae Bon Koo, +7 more
- 01 Feb 2006 - 
TL;DR: In this paper, the influence of surface treatment using hexamethyldisilazane (HMDS) on device performance of pentacene-based thin film transistor was investigated.
Journal ArticleDOI

Pentacene thin-film transistors and inverters with plasma-enhanced atomic-layer-deposited Al2O3 gate dielectric

Jae Bon Koo, +8 more
- 22 Jan 2007 - 
TL;DR: In this article, the performance of a pentacene thin-film transistor with plasma-enhanced atomic layer-deposited (PEALD) 150nm thick dielectric is reported.
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The Effect of Channel Length on Turn-on Voltage in Pentacene-Based Thin Film Transistor

Jae Bon Koo, +9 more
- 05 Apr 2006 - 
TL;DR: In this paper, the influence of channel length on transfer characteristics of pentacene-based thin-film transistor (TFT) was investigated and the positive shift behavior of Vturn-on voltage was found to be similar to the threshold voltage reduction behavior by drain induced barrier lowering in Si devices.
Journal ArticleDOI

Pentacene Thin-Film Transistors and Inverters with Dual-Gate Structure

Jae Bon Koo, +9 more
- 01 Nov 2006 - 
TL;DR: In this paper, the voltage transfer characteristics of an inverter with a dual-gate driver transistor and a single-gate load transistor, specifically, swing range and inversion voltage, were artificially controlled by changing the voltage bias of the top-gate electrode.