C
Chan-Long Shieh
Publications - 18
Citations - 1716
Chan-Long Shieh is an academic researcher. The author has contributed to research in topics: Oxide thin-film transistor & Layer (electronics). The author has an hindex of 7, co-authored 18 publications receiving 1431 citations.
Papers
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Journal ArticleDOI
High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm.
Xiong Gong,Minghong Tong,Yangjun Xia,Wanzhu Cai,Ji Sun Moon,Yong Cao,Gang Yu,Chan-Long Shieh,Boo Nilsson,Alan J. Heeger +9 more
TL;DR: This work demonstrates polymer photodetectors with broad spectral response fabricated by using a small-band-gap semiconducting polymer blended with a fullerene derivative that can exceed the response of an inorganic semiconductor detector at liquid helium temperature.
Patent
MOTFT with un-patterned etch-stop
TL;DR: In this article, a method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor oxide material, depositing an etch-stop material on the layer of MO material, and patterning a surface layer of source/drain metal on the blanket layer of etchstop material including etching the surface layer into source/drain terminals positioned to define a channel area.
Patent
Metal-insulator-metal (mim) devices and their methods of fabrication
TL;DR: In this paper, two-terminal switching devices of MIM type having at least one electrode formed by a liquid phase processing method are provided for use in active matrix backplane applications; more specifically, MIM devices with symmetric currentvoltage characteristics are applied for LCD and rotating element displays.
Patent
Mask level reduction for mofet
TL;DR: In this article, a gate dielectric is formed over the gate and a semiconducting metal oxide is deposited on the gate, and a nonconductive spacer is patterned on the transistor and portions of the surrounding source/drain metal layer.
Patent
Stable metal-oxide thin film transistor and method of making
TL;DR: In this article, a thin-film semiconductor device has a semiconductor layer including a composite/blend/mixture of an amorphous/nanocrystalline semiconductor ionic metal oxide and a non-semiconducting covalent metal oxide.