Showing papers by "Chang Jung Kim published in 1996"
TL;DR: In this article, the etching effects of PZT thin film capacitors with RuOx/Pt multilayered electrodes were studied to examine the etch effects. But the authors did not consider the effect of etch selectivity on the electrical properties of etched capacitors.
Abstract: Dry etching of PZT thin film capacitors with RuOx/Pt multilayered electrodes was studied to examine the etching effects. PZT films were deposited on RuOx/Pt/Ti/SiO2/ Si substrates by sol-gel process and Pt films were prepared by DC magnetron sputtering. PZT and Pt thin films were etched with Cl2/C2F6/Ar gas combination in an Inductively Coupled Plasma (ICP) by varying the etching parameters such as coil RF power, DC bias to wafer susceptor, and gas pressure. Etching effects were investigated in terms of etch rate, etch selectivity, etch profiles, and electrical properties of etched capacitors. Quantitative analysis of the etching damage was obtained by calculating the shift of the coercive field and the switchable polarization in hysteresis loops. Finally, the etching damage mechanism was discussed and the optimization of etching processes for the fabrication of PZT capacitors was attempted to minimize the etching damage to ferroelectric capacitors.
8 citations
TL;DR: In this article, RuO2/Pt electrode was used to examine the electrode effect on ferroelectric properties and better hysteretic properties were obtained from Pt/RuO2 /PZT/PZTs/RuRuO 2/PTs/PTP/Pts/RuPt/PzTs/TiO 2 reaction barrier layer.
Abstract: The ferroelectric capacitors are fabricated using RuO2/Pt electrode to examine the electrode effect on ferroelectric properties. PZT films are prepared by metalorganic decomposition (MOD) on sputter deposited electrodes. In particular, inductively coupled plasma(ICP) etcher is used to minimize the etching damage. In addition, TiO2 reaction barrier layer is also employed to retard the degradation of ferroelectric properties due to the reaction between a passivation layer and PZT film. The better hysteretic properties were obtained from Pt/RuO2/PZT/RuO2/Pt ferroelectric capacitors. The enhancement of ferroelectric properties is likely attributed to the modification in the microstructure of PZT film. The interfacial modification would be affected by the factors such as surface roughness, stress, and porosity of RuO2 film. The result implies RuO2/Pt would be a good electrode for a nonvolatile memory application.
3 citations
18 Aug 1996
TL;DR: In this paper, an inductively coupled plasma (ICP) etcher is used to minimize the etching damage and a reaction barrier layer is employed to retard the degradation of ferroelectric properties due to the reaction between a passivation layer and PZT film.
Abstract: The ferroelectric capacitors are fabricated using RuO/sub 2//Pt electrode. PZT films are prepared by metal-organic decomposition (MOD) on sputter deposited electrodes. In particular, inductively coupled plasma (ICP) etcher is used to minimize the etching damage. In addition, TiO/sub 2/ reaction barrier layer is also employed to retard the degradation of ferroelectric properties due to the reaction between a passivation layer and PZT film. The better hysteretic properties were obtained Pt/RuO/sub 2//PZT/RuO/sub 2//Pt ferroelectric capacitors. Enhancement of ferroelectric properties is likely attributed to the modification in the microstructure of PZT film. The result implicates RuO/sub 2//Pt would be a good electrode for a nonvolatile memory application.