Che-Hung Lin

TL;DR: An X-band high-power and high power added efficiency (PAE), two-stage AlgaAs/InGaAs/GaAs psuedomorphic high electronic mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) power amplifier is presented in this paper.

TL;DR: In this article, a planar three-way power divider which uses the coupled line instead of the transmission line is proposed to reduce chip size, which can provide not only compact but also dc block characteristics, which are very suitable for monolithic microwave integrated circuit applications.

TL;DR: In this paper, the authors proposed a power amplifier for Ku-band applications with a two-stage amplifier with chip size of 8.554mm2 (3.64mmtimes2.35mm) to fully match 50-Omega input and output impedance.

TL;DR: In this paper, a novel configuration of subharmonic mixer using an anti-parallel diode pair is presented for operating over the 23-37 GHz band, which employs a directional coupler, LC low-pass filter, and a short stub for isolating three ports corresponding to radio frequency (RF), local oscillation (LO) input, and intermediate frequency (IF) output ports.

TL;DR: In this article, the authors presented a compact X-band high gain and high power four-stage AlGaAs/InGaA/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA).