Small‐Molecule‐Based Organic Field‐Effect Transistor for Nonvolatile Memory and Artificial Synapse

There is little question that the "electronic revolution" of the 20th century has impacted almost every aspect of human life However, the emergence of solid-state electronics as a ubiquitous feature of an advanced modern society is posing new challenges such as the management of electronic waste (e-waste) that will remain through the 21st century In addition to developing strategies to manage such e-waste, further challenges can be identified concerning the conservation and recycling of scarce elements, reducing the use of toxic materials and solvents in electronics processing, and lowering energy usage during fabrication methods In response to these issues, the construction of electronic devices from renewable or biodegradable materials that decompose to harmless by-products is becoming a topic of great interest Such "green" electronic devices need to be fabricated on industrial scale through low-energy and low-cost methods that involve low/non-toxic functional materials or solvents This review highlights recent advances in the development of biodegradable materials and processing strategies for electronics with an emphasis on areas where green electronic devices show the greatest promise, including solar cells, organic field-effect transistors, light-emitting diodes, and other electronic devices

Biodegradable Materials and Green Processing for Green Electronics.

The emergence of flexible organic electronics that span the fields of physics and biomimetics creates the possibility for increasingly simple and intelligent products for use in everyday life. Organic field-effect transistors (OFETs), with their inherent flexibility, light weight, and biocompatibility, have shown great promise in the field of biomimicry. By applying such biomimetic OFETs for the internet of things (IoT) makes it possible to imagine novel products and use cases for the future. Recent advances in flexible OFETs and their applications in biomimetic systems are reviewed. Strategies to achieve flexible OFETs are individually discussed and recent progress in biomimetic sensory systems and nervous systems is reviewed in detail. OFETs are revealed to be one of the best systems for mimicking sensory and nervous systems. Additionally, a brief discussion of information storage based on OFETs is presented. Finally, a personal view of the utilization of biomimetic OFETs in the IoT and future challenges in this research area are provided.

When Flexible Organic Field-Effect Transistors Meet Biomimetics: A Prospective View of the Internet of Things.

Recently, flexible organic field-effect transistor (OFET)-based pressure sensors have been attracting significant interest for promising applications in electronic skin (e-skin) and wearable health...

Printed High-k Dielectric for Flexible Low-Power Extended Gate Field-Effect Transistor in Sensing Pressure

Stability improvement in flexible low-voltage organic field-effect transistors with complementary polymeric dielectrics

Organic non-volatile memory based on pentacene/tris(8-hydroxy quinoline) aluminum heterojunction transistor

The invention relates to an organic field-effect transistor memory based on a polymer doped semiconductor nanoparticle and a preparation method of the organic field-effect transistor memory, and belongs to the technical field of a storage technology in semiconductor industry and a biological thin film. The device structure comprises a source-drain electrode, an organic semiconductor, a polymer thin film doped with the semiconductor nanoparticle, a gate insulation layer and a gate electrode from top to bottom, and the polymer thin film doped with the semiconductor nanoparticle is arranged between the organic semiconductor and the gate insulation layer of the organic field-effect transistor memory and is used as a charge storage layer for capturing charges. By doping the semiconductor nanoparticle in a polymer, the storage performance of the device is optimized and improved, so that the storage capacity, the switch speed and the storage stability of the organic field-effect transistor memory can be greatly improved; and moreover, the device is fabricated mostly by employing a solution method, is low in cost and is easy to promote.

Organic field-effect transistor memory based on polymer doped semiconductor nanoparticle

The invention discloses a floating gate-type flexible low-voltage organic field effect transistor memory. The memory comprises a source and a drain formed through a vacuum evaporation process on a semiconductor layer; a tunneling layer, a floating gate layer, a charge blocking layer, a gate electrode and a flexible plastic substrate are sequentially arranged below the semiconductor layer; the charge blocking layer adopts a high-insulation cross-linked polymer, an isolation layer is formed on the upper surface of the charge blocking layer through a small molecule doping process and a solution processing mode, and thus, functions of the floating gate layer and the tunneling layer can be realized at the same time. The invention also provides a method of preparing the above floating gate-type flexible low-voltage organic field effect transistor memory. Thus, good transistor performance under low voltage can be presented, good memory can be realized under low voltage through a multi-element doping mode, the performance of the original transistor and the original memory can still be kept in a small bending radius and different bending modes, and the mechanical flexibility is good.

Floating gate-type flexible low-voltage organic field effect transistor memory

The invention discloses a three-layer heterojunction organic field-effect transistor memory and a fabrication method thereof The memory comprises a substrate, wherein a source-drain electrode, an organic semiconductor heterojunction, a gate insulation layer and a gate electrode are sequentially arranged on the substrate from top to bottom, a polymer electret layer is arranged between the organicsemiconductor heterojunction and the gate insulation layer, the gate insulation layer covers a surface of the whole gate electrode and is used for isolating contact between the gate electrode and thepolymer electret layer, and the organic semiconductor heterojunction sequentially comprises a first hole transmission layer, an electron transmission layer and a second hole transmission layer from top to bottom In the three-layer heterojunction organic field-effect transistor memory and the fabrication method thereof, provided by the invention, the polymer electret layer is fabricated on the gate insulation layer by a spinning method, morphology growth of the semiconductor heterojunction and the metal source-drain electrode is facilitated, the process is simple, the storage capacity, the current switch ratio and the storage speed can be greatly improved, the device fabrication cost is reduced, and promotion and application are convenient

Chen Xudong

Papers

Stability improvement in flexible low-voltage organic field-effect transistors with complementary polymeric dielectrics

Organic non-volatile memory based on pentacene/tris(8-hydroxy quinoline) aluminum heterojunction transistor

Organic field-effect transistor memory based on polymer doped semiconductor nanoparticle

Floating gate-type flexible low-voltage organic field effect transistor memory

Three-layer heterojunction organic field-effect transistor memory and fabrication method thereof