There is a special reason for reviewing this book at this time: it is the 50th edition of a compendium that is known and used frequently in most chemical and physical laboratories in many parts of the world. Surely, a publication that has been published for 56 years, withstanding the vagaries of science in this century, must have had something to offer. There is another reason: while the book is a standard fixture in most chemical and physical laboratories, including those in medical centers, it is not as frequently seen in the laboratories of physician's offices (those either in solo or group practice). I believe that the Handbook can be useful in those laboratories. One of the reasons, among others, is that the various basic items of information it offers may be helpful in new tests, either physical or chemical, which are continuously being published. The basic information may relate

Handbook of Chemistry and Physics

Due to its significant applications in many relevant fields, light detection in the solar-blind deep-ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar-blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga2O3, MgxZn1−xO, III-nitride compounds (AlxGa1−xN/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field.

Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Smithells Metals Reference Book

A review on nanostructured glass ceramics for promising application in optical thermometry

Self-powered photodetectors based on β-Ga2O3/4H–SiC heterojunction with ultrahigh current on/off ratio and fast response

Enhanced up-conversion luminescence and optical thermometry characteristics of Er 3+ /Yb 3+ co-doped transparent phosphate glass-ceramics

Indium tin oxide (ITO) has been studied in applications at normal high temperature below 600 °C, due to excellently electrical characteristics. Attempts to further match the needs of electronics in extremely harsh environments, the changes in the conductive properties of ITO films and its mechanism were investigated at special high-temperature above 1000 °C. ITO films were prepared by pulsed laser deposition (PLA) on lanthanum gallium silicate (LGS) substrates. Furthermore, the as-deposited samples were annealed at different temperature-time treatments, and investigated the effects of annealing on the electrical, structure, surface morphology and chemical properties of ITO films by X-ray diffraction analysis, scanning electron microscopy (SEM), resistance measurement, and X-ray photoelectron spectroscopy (XPS). The experimental results present that the decreased resistance of ITO films was mainly attributed to the increase of the crystalline size and the increased amount of Sn 4+ ions during the heating-up period (0 °C to 1000 °C). Generally, The ITO film showed stable electrical properties when it was heated at the temperature of 1000 °C for at least 2.5hours. The expected ITO films that remain steady above 1000 °C have potential applications as electrodes working in special high-temperature environments.

/pdf/high-temperature-conductive-stability-of-indium-tin-oxide-cx9bp43n2w.pdf

High Temperature Conductive Stability of Indium Tin Oxide Films

Morphology-dependent high antireflective surfaces via anodic aluminum oxide nanostructures

In this paper, a facile and cost effective hydrothermal method was employed to fabricate high performance ZnO/β-Ga2O3 core-shell heterostructures. A highly sensitive ultraviolet (UV) sensor was fabricated based on vertically aligned β-Ga2O3 decorated ZnO core-shell nanorod arrays (NRs). The ZnO/β-Ga2O3 heterostructures showed an excellent improvement in UV response characteristics comparing with bare ZnO NRs. It can be attributed to the lower interface barrier and larger surface area-to-volume ratio for the ZnO/β-Ga2O3 heterostructures. Meanwhile, a higher concentration of surface oxygen vacancies has been observed in ZnO/β-Ga2O3 heterostructures, which helps to increase the charge separation efficiency for the UV detector. The results suggested that the ZnO/β-Ga2O3 core-shell heterostructure should be suitable for practical applications of UV photodetectors.

Simple fabrication ZnO/β-Ga2O3 core/shell nanorod arrays and their photoresponse properties

A novel silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) structure has been proposed. The new structure features a substrate field plate (SFP) and a variable-k dielectric buried layer (VKBL). The SFP and VKBL improve the breakdown voltage by introducing new electric field peaks in the surface electric field distribution. Moreover, the SFP reduces the specific ON-resistance through an enhanced auxiliary depletion effect on the drift region. The simulation results indicate that compared to the conventional SOI LDMOS structure, the breakdown voltage is improved from 118 V to 221 V, the specific ON-resistance is decreased from 7.15 mΩ·cm2 to 3.81 mΩ·cm2, the peak value of surface temperature is declined by 38 K.

Chen Yonghe

Papers

Enhanced up-conversion luminescence and optical thermometry characteristics of Er 3+ /Yb 3+ co-doped transparent phosphate glass-ceramics

High Temperature Conductive Stability of Indium Tin Oxide Films

Morphology-dependent high antireflective surfaces via anodic aluminum oxide nanostructures

Simple fabrication ZnO/β-Ga2O3 core/shell nanorod arrays and their photoresponse properties

A novel SOI LDMOS with substrate field plate and variable-k dielectric buried layer