Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites–MoS2 heterostructures, 2D–0D MoS2/quantum dots (QDs) and 2D–2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W−1 up to 1010 A W−1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10−9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.

/pdf/a-review-of-molybdenum-disulfide-mos2-based-photodetectors-5dugidies6.pdf

A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

Realizing efficient CO2 photoreduction in Bi3O4Cl: Constructing van der Waals heterostructure with g-C3N4

2D materials, such as graphene, black phosphorous and transition metal dichalcogenides, have gained persistent attention in the past few years thanks to their unique properties for optoelectronics. More importantly, introducing 2D materials into silicon photonic devices will greatly promote the performance of optoelectronic devices, including improvement of response speed, reduction of energy consumption, and simplification of fabrication process. Moreover, 2D materials meet the requirements of complementary metal-oxide-semiconductor compatible silicon photonic manufacturing. A comprehensive overview and evaluation of state-of-the-art 2D photonic integrated devices for telecommunication applications is provided, including light sources, optical modulators, and photodetectors. Optimized by unique structures such as photonic crystal waveguide, slot waveguide, and microring resonator, these 2D material-based photonic devices can be further improved in light-matter interactions, providing a powerful design for silicon photonic integrated circuits.

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202003834

2D Materials Enabled Next-Generation Integrated Optoelectronics: from Fabrication to Applications

Recent Advances in 2D Materials for Photodetectors

Recent advances of atomically thin 2D heterostructures in sensing applications

Band engineering using the van der Waals heterostructure of two-dimensional materials allows for the realization of high-performance optoelectronic devices by providing an ultrathin and uniform PN junction with sharp band edges In this study, a highly sensitive photodetector based on the van der Waals heterostructure of WSe2 and MoS2 was developed The MoS2 was utilized as the channel for a phototransistor, whereas the WSe2-MoS2 PN junction in the out-of-plane orientation was utilized as a charge transfer layer The vertical built-in electric field in the PN junction separated the photogenerated carriers, thus leading to a high photoconductive gain of 106 The proposed phototransistor exhibited an excellent performance, namely, a high photoresponsivity of 2700 A/W, specific detectivity of 5 × 1011 Jones, and response time of 17 ms The proposed scheme in conjunction with the large-area synthesis technology of two-dimensional materials contributes significantly to practical photodetector applications

Cheol Min Park

Papers

Ultrasensitive Phototransistor Based on WSe2–MoS2 van der Waals Heterojunction