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Chi T.Q. Nguyen
Researcher at Hanoi University of Science and Technology
Publications - 13
Citations - 190
Chi T.Q. Nguyen is an academic researcher from Hanoi University of Science and Technology. The author has contributed to research in topics: Thin film & Pulsed laser deposition. The author has an hindex of 6, co-authored 9 publications receiving 124 citations. Previous affiliations of Chi T.Q. Nguyen include Hanoi University & Vietnam National University, Ho Chi Minh City.
Papers
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Journal ArticleDOI
Controlling microstructure and film growth of relaxor-ferroelectric thin films for high break-down strength and energy-storage performance
TL;DR: In this article, relaxor ferroelectric Pb 0.9 La 0.1 (Zr 0.52 Ti 0.48 )O 3 (PLZT) thin films were deposited using pulsed laser deposition, and their microstructures, breakdown field strengths and energy storage performances were investigated as a function of the buffer layer and electrode.
Journal ArticleDOI
Research Update: Enhanced energy storage density and energy efficiency of epitaxial Pb0.9La0.1(Zr0.52Ti0.48)O3 relaxor-ferroelectric thin-films deposited on silicon by pulsed laser deposition
Minh D. Nguyen,Minh D. Nguyen,Evert Pieter Houwman,Matthijn Dekkers,Chi T.Q. Nguyen,Chi T.Q. Nguyen,Hung N. Vu,Guus Rijnders +7 more
TL;DR: In this article, a large recoverable storage density (U reco) of 13.7 J/cm3 together with a high energy efficiency (η) of 88.2% under an applied electric field of 1000 kV/cm and at 1 kHz frequency was obtained in 300-nm-thick epitaxial PLZT thin films.
Journal ArticleDOI
Enhancement of relaxor behavior by La doping and its influence on the energy storage performance and electric breakdown strength of ferroelectric Pb(Zr0.52Ti0.48)O3 thin films
Ha T. Dang,Trang T. Trinh,Chi T.Q. Nguyen,Chi T.Q. Nguyen,Truong V. Do,Minh D. Nguyen,Hung N. Vu +6 more
TL;DR: In this paper, the effects of La-doped Pb1-xLax(Zr0.52Ti0.48)O3 (PLZT) thin films with dopant concentrations of up to 12% were fabricated on (111)Pt/Ti/SiO2/Si substrates by a sol-gel spin-coating method to investigate the effect of La content on the phase transition, ferroelectric and energy-storage performance properties of PZT thin films.
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Experimental evidence of breakdown strength and its effect on energy-storage performance in normal and relaxor ferroelectric films
TL;DR: In this article, normal-ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin-films are deposited on SrRuO3-covered SrTiO3/Si substrates.
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High-performance energy storage and breakdown strength of low-temperature laser-deposited relaxor PLZT thin films on flexible Ti-foils
TL;DR: In this paper, the microstructure, ferroelectric, electric-field breakdown strength, and energy-storage properties of relaxor Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin films grown on flexible Ti foils using pulsed laser deposition were systematically investigated.