In a light emitting device and system providing white light with various color temperatures are provided, a light emitting device includes a light emitting element (LED) that is operated by a driving bias and emits first light, and a phosphor layer including a phosphor that partially wavelength-converts first light and emits second light, thereby emitting white light using the first light and the second light, wherein the phosphor has a maximum conversion efficiency at a first level of the driving bias, and the LED has a maximum conversion efficiency at a second level of the driving bias, the first level being different from the first level.

Light emitting device and system providing white light with various color temperatures

By doping an organic compound functioning as an electron donor (hereinafter referred to as donor molecules) into an organic compound layer contacting a cathode, donor levels can be formed between respective LUMO (lowest unoccupied molecular orbital) levels between the cathode and the organic compound layer, and therefore electrons can be injected from the cathode, and transmission of the injected electrons can be performed with good efficiency. Further, there are no problems such as excessive energy loss, deterioration of the organic compound layer itself, and the like accompanying electron movement, and therefore an increase in the electron injecting characteristics and a decrease in the driver voltage can both be achieved without depending on the work function of the cathode material.

Light Emitting Device

The present disclosure relates to a semiconductor light-emitting element, which comprises: a first light-emitting part, a second light-emitting part, and a third light-emitting part, wherein each of the light-emitting parts includes multiple semiconductor layers including a first semiconductor layer, an active layer, and a second semiconductor layer, laminated in sequence, the first semiconductor layer having a first conductivity, the active layer generating light through the recombination of an electron and a hole, and the second semiconductor layer having a second conductivity different from the first conductivity; a non-conductive reflecting film which is formed to cover the multiple semiconductor layers and reflects light generated from the active layer; a first electrode which is provided to electrically communicate with the first semiconductor layer of the first light-emitting part and which supplies one of an electron and a hole; a second electrode which is provided to electrically communicate with the second semiconductor layer of the second light-emitting part and which supplies the other of the electron and the hole; and an auxiliary pad formed on the non-conductive reflecting film which covers the third light-emitting part.

Semiconductor light emitting element

A structure of a light-emitting device includes the following components: a substrate; an epitaxial structure on the substrate, the epitaxial structure including at least a first conductivity type semiconductor layer, a light-emitting active layer, and a second conductivity type semiconductor layer; a first electrode on the first conductivity type semiconductor layer; a transparent conductive layer between the first electrode and the first conductivity type semiconductor layer; and a three-dimensional distributed Bragg reflector (DBR) layer between the transparent conductive layer and the first conductivity type semiconductor layer.

Light-emitting device

A semiconductor light-emitting device includes a reflective electrode on a support; a first cladding layer; a light-emitting layer; a second cladding layer having a terrace structure formed of recesses and protrusions, a light-extracting structure having projections and depressions being formed on top surfaces of the protrusions and bottom surfaces of the recesses; and surface electrodes on the top surfaces of the protrusions. The second cladding layer has a stacked structure, which includes a first current-spreading layer, a first light-extracting layer on the first current-spreading layer and having the light-extracting structure on the bottom surfaces of the recesses, a second current-spreading layer on the first light-extracting layer, and a second light-extracting layer on the second current-spreading layer and having the light-extracting structure on the top surfaces of the protrusions, and the first and second light-extracting layer have lower light absorptance and higher resistance than the first and second current-spreading layer.

Semiconductor light-emitting device

The invention relates to a light-emitting device, comprising a plurality of light sources, an optical plate, a plurality of concave structures and at least one light-emitting structure, wherein the optical plate is arranged above the light sources and provided with an upper surface and a lower surface The concave structures extend towards the inside of the optical plate from the upper surface of the optical plate, each concave structure is correspondingly arranged above one light source, and the lateral surface of each concave structure has at least two inclined angles The light-emitting structures are arranged on at least one of the upper surface and the lower surface of the optical plate, wherein light generated by the light sources positioned below each concave structure generates total reflection on the side surface of the concave structure and continuously carries out at least one total reflection in the optical plate and emits light out of the optical plate until coming across the light emergent structure

A hybrid optical film includes a first layer, a second layer, and a plurality of diffusion structures. The first layer has a light entering face and a first refractive index. The second layer has a second refractive index and is disposed on a face of the first layer opposite to the light entering face, wherein the second refractive index is lower than the first refractive index. The plurality of diffusion structures are disposed on the interface of the first layer and the second layer. The diffusion structure has a third refractive index, wherein the third refractive index is between the first refractive index and the second refractive index and is selectively equal to the first refractive index and the second refractive index.

Hybrid Optical Film

The invention relates to an optical film, comprising a light penetrating substrate, a plurality of first cylinders and a plurality of second cylinders. The light penetrating substrate has a first surface and a second surface which are opposite to each other. The first cylinders are deployed on the first surface. A plurality of the first sections of all first cylinders which are in parallel with the first surface gradually become smaller along a first direction far away from the first surface. All first cylinders are provided with first end faces which contact the first surface. The second cylinders are deployed on the second surface. The second cylinders correspond to the first cylinders respectively. A plurality of the second sections of all second cylinders which are in parallel with the second surface gradually become smaller along a second direction far away from the second surface. All second cylinders are provided with second end faces which contact the second surface and the orthographic projection of all second end faces on the first surface is positioned in the corresponding first end face.

Chi Zen-Yuan

Papers

Light-emitting device

Hybrid Optical Film

Optical film and backlight module