High luminescence efficiency of Copper doped Zinc Sulfide (Cu: ZnS) nanoparticles towards LED applications

Undoped and ytterbium-doped ZnO films were synthesized on fluorine-doped tin oxide (FTO) conductive substrates using zinc nitrate hexahydrate (Zn(NO3).6H2O), sodium hydroxide (NaOH), ytterbium nitrate penta-hydride (Yb (NO3)3.5H2O) as sources of Zn2+, O2− and Yb2+ ions respectively through electrodeposition method. The structure, elemental composition, and optical features were determined via x-ray diffractometry (XRD), Energy dispersive x-ray spectroscopy (EDX), UV–visible spectrophotometry (UV–vis), four-point probe technique, and scanning electron microscopy respectively. The impact of Yb on ZnO crystallographic, elemental, optical, and energy band gap features of the ZnO materials have been studied. Structural results revealed polycrystalline films while the EDX spectrum affirms the presence of the basic elemental composition of deposits. The optical result showed high absorbance feature and decreased energy band gaps of zinc oxide films after introducing ytterbium as dopant. The energy band gap value observed for the undoped zinc oxide film which was 3.05 eV recorded a decreased range from 2.79 eV to 2.64 eV upon doping. The films exhibited increasing resistivity with thickness and granular nanocrystals distributed over the substrate surface. The low transmitting property and decreased energy band gaps of the Yb-doped ZnO films make it useful materials for solar thermal energy collectors and photovoltaic applications.

https://iopscience.iop.org/article/10.1088/2053-1591/abd5d6/pdf

Influence of ytterbium (Yb) dopant on the optical properties of electrochemically deposited zinc oxide (ZnO) films

Effect of temperature on the morphological, structural and optical properties of electrodeposited Yb-doped ZrSe2 thin films

Transition metal chalcogenide thin films of the type FexZrSe2 have applications in electronic devices, but their use is limited by current synthetic techniques Here, we demonstrate the synthesis a

https://pubs.acs.org/doi/pdf/10.1021/acsomega.0c00413

Iron-Intercalated Zirconium Diselenide Thin Films from the Low-Pressure Chemical Vapor Deposition of [Fe(η5-C5H4Se)2Zr(η5-C5H5)2]2.

Temperature-modulated nanostructures of ytterbium-doped Cobalt Selenide (Yb-CoSe) for photovoltaic applications

This research focus on the Influence of Dopant Concentration on Polycrystalline Ytterbium-doped ZrSe (Yb-ZrSe) material for possible photovoltaic application using the electrochemical deposition method. The cationic precursor was an aqueous solution of 0.01 mol ZrOCl2.8H2O while the anionic precursor was 0.15 mol selenium was prepared by dissolving with 5 ml of Hydrochloric acid (HCl), and then 0.05 mol Yb (NO3)3.5H2O was used as the dopant. The films were characterized using UV-1800 Visible Spectrophotometer, Bruker D8 Advance x-ray diffractometer with Cu Kα line (λ = 1.54056 A) in 2θ range from 10°–90°and Scanning Electron Microscopy. X-ray diffraction (XRD) of the deposited films on FTO substrate studies reveals that films are polycrystalline by exhibiting diffraction peaks at (111), (200), (200) and (210) corresponds to the following angle (27.00°), (38.01°), (46.02°), (66.02°). (SEM) revealed that the grain size was uniformly distributed on the surface of the substrate. The optical band gap energy was obtained.

https://iopscience.iop.org/article/10.1088/2053-1591/ab7690/pdf

Influence of dopant concentration on the electronic band gap energy of Yb-ZrSe2 thin films for photovoltaic application via electrochemical deposition technique

Chidimma F. Okoro

Papers

Effect of temperature on the morphological, structural and optical properties of electrodeposited Yb-doped ZrSe2 thin films

Influence of dopant concentration on the electronic band gap energy of Yb-ZrSe2 thin films for photovoltaic application via electrochemical deposition technique