An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line.

Light emitting device and method of manufacturing the same

Provided is an organic electroluminescence device having high luminous efficiency, high heat resistance and an extremely long lifetime. The organic electroluminescence device of the present invention includes an organic thin film layer composed of one or more layers containing at least a light emitting layer is interposed between a cathode and an anode. The light emitting layer includes a compound containing a condensed ring and a luminescent metal complex capable of emitting light having a red-based color. It is preferable that the compound containing a condensed ring includes a host material, while the luminescent metal complex capable of emitting light having a red-based color includes a phosphorescent dopant.

Organic Electroluminescent Device

To prevent a point defect and a line defect in forming a light-emitting device, thereby improving the yield. A light-emitting element and a driver circuit of the light-emitting element, which are provided over different substrates, are electrically connected. That is, a light-emitting element and a driver circuit of the light-emitting element are formed over different substrates first, and then electrically connected. By providing a light-emitting element and a driver circuit of the light-emitting element over different substrates, the step of forming the light-emitting element and the step of forming the driver circuit of the light-emitting element can be performed separately. Therefore, degrees of freedom of each step can be increased, and the process can be flexibly changed. Further, steps (irregularities) on the surface for forming the light-emitting element can be reduced than in the conventional technique.

Light-emitting device and manufacturing method thereof

Novel tricarbazole compounds are provided. By appropriately selecting the nature of the tricarbazole substituents, compounds with appropriate HOMO and LUMO energies can be obtained for use as materials in a secondary hole transport layer.

Organic Electroluminescent Materials and Devices

A method of making a 4-terminal active matrix electroluminescent device that utilizes an organic material as the electroluminescent medium is described. In this method, thin film transistors are formed from polycrystalline silicon at a temperature sufficiently low such that a low temperature, silica-based glass can be used as the substrate.

A method of fabricating a TFT-EL pixel

PROBLEM TO BE SOLVED: To provide a 4-terminal thin film transistor electroluminescence device using an organic material as an electroluminescence medium. SOLUTION: This device comprises two thin film transistors T1, T2, a capacitor Cs and an overlay passivation layer having an opening with an edge with a taper on which an organic electroluminescence layer EL is disposed. It is a cathode layer that is overlaid on the organic electroluminescence material, preferably a continuous layer made by a material with a low work function.

Electroluminescent device with organic electroluminescent layer

PROBLEM TO BE SOLVED: To obtain an active matrix 4-terminal TFT-EL device in which an organic material is used as an EL medium by using a thin film transistor formed by polycrystalline silicone. SOLUTION: A first thin film transistor (TFT1) formed from polycrystalline silicone is disposed on th upper surface of a substrate. A source electrode of TFT1 is electrically connected to a source path. A second TFT 2 is disposed on the upper surface of a substrate, and a gate electrode is electrically connected to a drain electrode of the first TFT1. A storage condenser is disposed on the upper surface of the substrate. An anode layer is electrically connected to a drain electrode of the TFT2. A dielectric passivation layer is accumulated on at least the source of the TFT1. The dielectric passivation layer is etched to provide an opening on a display anode. Further, an organic electroluminescence(EL) layer is directly disposed on the upper surface of an anode layer. Subsequently, a cathode layer is directly accumulated on the upper layer of the organic EL layer.

Chin Wan Tan

Papers

A method of fabricating a TFT-EL pixel

Electroluminescent device with organic electroluminescent layer

Manufacture of tft- el picture element