The present invention provides compositions and methods for treating cancer in a human. The invention includes relates to administering a genetically modified T cell to express a CAR wherein the CAR comprises an antigen binding domain, a transmembrane domain, a costimulatory signaling region, and a CD3 zeta signaling domain.

Use of chimeric antigen receptor-modified t cells to treat cancer

A memory cell array has a first and a second storage area. The first storage area has a memory elements selected by an address signal. The second storage area has a memory elements selected by a control signal. A control circuit has a fuse element. When the fuse element has been blown, the control circuit inhibits at least one of writing and erasing from being done on the second storage area.

Nonvolatile Semiconductor Memory Device

A method for operating a memory (28) that includes a plurality of analog memory cells (32) includes storing data in the memory by writing first storage values to the cells. Second storage values are read from the cells, and a Cumulative Distribution Function (CDF) of the second storage values is estimated. The estimated CDF is processed so as to compute one or more thresholds. A memory access operation is performed on the cells using the one or more thresholds.

Adaptive Estimation of Memory Cell Read Thresholds

A non-volatile solid-state storage subsystem, such as a non-volatile memory device, maintains usage statistics reflective of the wear state, and thus the remaining useful life, of the subsystem's memory array. A host system reads the usage statistics information, or data derived therefrom, from the subsystem to evaluate the subsystem's remaining life expectancy. The host system may use this information for various purposes, such as to (a) display or report information regarding the remaining life of the subsystem; (b) adjust the frequency with which data is written to the subsystem; and/or (c) select the type(s) of data written to the subsystem.

Systems and methods for measuring the useful life of solid-state storage devices

A NAND controller for interfacing between a host device and a flash memory device (e.g. a NAND flash memory device) fabricated on a flash die is disclosed. In some embodiments, the presently disclosed NAND controller includes electronic circuitry fabricated on a controller die, the controller die being distinct from the flash die, a first interface (e.g. a host-type interface, for example, a NAND interface) for interfacing between the electronic circuitry and the flash memory device, and a second interface (e.g. a flash-type interface) for interfacing between the controller and the host device, wherein the second interface is a NAND interface. According to some embodiments, the first interface is an inter-die interface. According to some embodiments, the first interface is a NAND interface. Systems including the presently disclosed NAND controller are also disclosed. Methods for assembling the aforementioned systems, and for reading and writing data using NAND controllers are also disclosed.

NAND flash memory controller exporting a NAND interface

A hard disk drive based data archive system emulating a tape archive system includes a hot pluggable multi-drive magazine having a housing for holding a plurality of hard disk drives, each drive connected to receive power and data from the magazine in a controlled fashion, and at least one magazine receiving system for physically receiving the magazine and for thereupon providing power, data and control connections to the magazine, such that when the magazine is received within the magazine receiving system, the hard disk drives selectively receive power and data connections via the magazine and receiving system from a host computer. The magazine may be hot-disconnected from an active computing system environment and removed to an archive rack wherein each disk drive is periodically checked to ensure functionality and to provide some limited-bandwidth data retrieval functions via a network connection to the archive rack. A file mark structure enables a disk drive in the magazine to emulate functionality of a tape cartridge.

Removable disk storage array emulating tape library having backup and archive capability

Systems and processes may include a memory coupled to a memory controller. Command signals for performing memory access operations may be received. Attributes of the command signals, such as type, time lapsed since receipt, and relatedness to other command signals, may be determined. Command signals may be sequenced in a sequence of execution based on the attributes. Command signals may be executed in the sequence of execution.

Command resequencing in memory operations

A system and method, including software implemented techniques, can be used to adjust for sag in stored data values. Charge is applied to multiple memory cells, and each memory cell is charged to a target voltage corresponding to a data value. The memory cells include a reference cell that is charged to a predetermined voltage. A voltage level in the reference cell is detected, and voltage levels from a group of memory cells are also detected. An adjustment is performed based upon the difference between the detected voltage level in the reference cell and the predetermined voltage.

Shifting Reference Values to Account for Voltage Sag

A host processor is coupled to a memory controller and configurable to retrieve from the memory controller information indicative of the health of a non-volatile memory device operatively coupled to the memory controller. A host system uses the information to monitor the health of the non-volatile memory device.

Monitoring health of non-volatile memory

A system and method, including computer software, allows reading data from a flash memory cell. Voltages from a group of memory cells are detected. The group of memory cells have associated metadata for error detection, and each memory cell stores a voltage representing a data value selected from multiple possible data values. Each possible data value corresponds to one range of multiple non-overlapping ranges of analog voltages. Memory cells having uncertain data values are identified based on the detected voltages. Alternative data values for the memory cells having the uncertain data values are determined, and a combination of alternative data values is selected. An error detection test is performed using the metadata associated with the multiple memory cells and the selected combination of alternative data values.

Christopher P. Dudte

Papers

Removable disk storage array emulating tape library having backup and archive capability

Command resequencing in memory operations

Shifting Reference Values to Account for Voltage Sag

Monitoring health of non-volatile memory

Use of alternative value in cell detection