Rapid transmission of infectious microorganisms such as viruses and bacteria through person-to-person contact has contributed significantly to global health issues. The high survivability of these microorganisms on the material surface enumerates their transmissibility to the susceptible patient. The antimicrobial coating has emerged as one of the most interesting technologies to prevent growth and subsequently kill disease-causing microorganisms. It offers an effective solution a non-invasive, low-cost, easy-in-use, side-effect-free, and environmentally friendly method to prevent nosocomial infection. Among antimicrobial coating, zinc oxide (ZnO) stands as one of the excellent materials owing to zero toxicity, high biocompatibility to human organs, good stability, high abundancy, affordability, and high photocatalytic performance to kill various infectious pathogens. Therefore, this review provides the latest research progress on advanced applications of ZnO nanostructure-based antibacterial coatings for medical devices, biomedical applications, and health care facilities. Finally, future challenges and clinical practices of ZnO-based antibacterial coating are addressed. 

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ZnO-based antimicrobial coatings for biomedical applications

The aim of the present study was the development of Nb-doped ITO thin films for carbon monoxide (CO) sensing applications. The detection of CO is imperious because of its high toxicity, with long-term exposure having a negative impact on human health. Using a feasible sol–gel method, the doped ITO thin films were prepared at room temperature and deposited onto various substrates (Si, SiO2/glass, and glass). The structural, morphological, and optical characterization was performed by the following techniques: X-ray diffractometry (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and UV/Vis/NIR spectroscopic ellipsometry (SE). The analysis revealed a crystalline structure and a low surface roughness of the doped ITO-based thin films. XTEM analysis (cross-sectional transmission electron microscopy) showed that the film has crystallites of the order of 5–10 nm and relatively large pores (around 3–5 nm in diameter). A transmittance value of 80% in the visible region and an optical band-gap energy of around 3.7 eV were found for dip-coated ITO/Nb films on SiO2/glass and glass supports. The EDX measurements proved the presence of Nb in the ITO film in a molar ratio of 3.7%, close to the intended one (4%). Gas testing measurements were carried out on the ITO undoped and doped thin films deposited on glass substrate. The presence of Nb in the ITO matrix increases the electrical signal and the sensitivity to CO detection, leading to the highest response for 2000 ppm CO concentration at working temperature of 300 °C.

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Structural, Optical, and Sensing Properties of Nb-Doped ITO Thin Films Deposited by the Sol–Gel Method

Electrospun Poly(vinyl alcohol)–l-Arginine Nanofiber Composites for Direct Air Capture of CO2

Changes in the electrical properties and trap characteristics of flexible low-temperature polysilicon thin-film transistors (TFTs) under the application of uniaxial bending strains and during repetitive bending cycles were investigated. When the bending strain increased, the transfer curve showed a negative shift, the output current decreased, and the subthreshold slope increased. After the bending strains were removed, the electrical performance showed recovery behavior, but the device performance could not return fully to its original state. The devices were also subjected to repetitive bending cycles. The transfer curves showed a positive shift after <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{4}}$ </tex-math></inline-formula> bending cycles and the output current increased. Using the transient current method, it was established that the detrapping time constant of the traps decreased and the peak amplitudes increased as a result of both the bending strain and the bending cycles. However, while the trap activation energy was not changed by static bending, it did decrease after the repetitive bending cycles. Both the changes in the electrical properties and the time constant spectra confirm that the trap state density increased as a result of the bending processes. However, the different trapping behaviors contributed to different degradations in the device’s electrical properties. 

Effects of Static and Repetitive Uniaxial Bending Strains on the Electrical Properties and Trap Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors

Chunyuan Hu

Papers

Effect of laser energy on the properties of neodymium-doped indium zinc oxide thin films deposited by pulsed laser deposition

Environmentally friendly, flexible and high performance PVA dielectric layer fabricated by solution method and its application in IGZO-TFT