We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

CRYSTALLINE MATERIALS Introduction Physical Properties Optical Properties Mechanical Properties Thermal Properties Magnetooptic Properties Electrooptic Properties Elastooptic Properties Nonlinear Optical Properties GLASSES Introduction Commercial Optical Glasses Specialty Optical Glasses Fused Silica Fluoride Glasses Chalcogenide Glasses Magnetooptic Properties Electrooptic Properties Elastooptic Properties Nonlinear Optical Properties Special Glasses POLYMERIC MATERIALS Optical Plastics Index of Refraction Nonlinear Optical Properties Thermal Properties Engineering Data METALS Physical Properties of Selected Metals Optical Properties Mechanical Properties Thermal Properties Mirror Substrate Materials LIQUIDS Introduction Water Physical Properties of Selected Liquids Index of Refraction Nonlinear Optical Properties Magnetooptic Properties Commercial Optical Liquids GASES Introduction Physical Properties of Selected Gases Index of Refraction Nonlinear Optical Properties Magnetooptic Properties Atomic Resonance Filters APPENDICES Safe Handling of Optical Materials Abbreviations, Acronyms, and Mineralogical or Common Names for Optical Materials Abbreviations for Methods of Preparing Optical Materials and Thin Films Fundamental Physical Constants Units and Conversion Factors

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Handbook of Optical Materials

Spin dynamics in semiconductors

This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.

Deformation Potentials ofk = 0 States of Tetrahedral Semiconductors

The Shubnikov-de Haas (SdH) effect was used to study the strain dependence of the inversion-asymmetry splitting of the conduction band in InSb. This splitting is small and hence has been difficult to observe by any technique other than the one presented in this paper. At zero stress, studies in InSb have shown no indication of beating effects in the SdH oscillations. With the application of uniaxial stress, however, stress-induced beating effects appear in the SdH oscillations. These beating effects, which depend on the magnetic field direction and the electron concentration, are shown to be caused by the stress-induced band splitting. The strain theory developed by Bir and Pikus, along with a simple, classical beating-effects model, enables the evaluation of the band-splitting parameter $|{B}_{3}|=3.3(\frac{{\ensuremath{\hbar}}^{2}}{2{m}_{0}})$ and the deformation potential $|{C}_{2}|=2.0$ eV.

Inversion-asymmetry splitting of the conduction band in InSb

Effective $g$-factor values for $n\ensuremath{-}\mathrm{I}\mathrm{n}\mathrm{S}\mathrm{b}$ have been determined by a new method, the direct curve fit of Shubnikov-de Haas theory to experimental magnetoconductivity oscillations. The fits were made with unsplit data, data with no well-defined double peaks. The values obtained show better agreement with electron-spin-resonance values than do values obtained by previous Shubnikov-de Haas methods. The fitting procedure allows the $g$ factors to be determined for high-concentration samples where electron-spin-resonance experiments fail.

Determination of the g factor from unsplit Shubnikov-de Haas oscillations in n − I n S b

C${\mathrm{O}}_{2}$-laser---induced phonon-assisted cyclotron-resonance harmonics (PACRH) in $n$-type InSb are investigated at low magnetic fields with photoconductivity techniques. The high resolution allowed transitions up to the 23rd harmonic to be seen. Polarization studies of PACRH show that strong resonances are present for $\stackrel{\ensuremath{\rightarrow}}{\mathrm{e}}\ensuremath{\perp}\stackrel{\ensuremath{\rightarrow}}{\mathrm{B}}$ (but not for $\stackrel{\ensuremath{\rightarrow}}{\mathrm{e}}\ensuremath{\parallel}\stackrel{\ensuremath{\rightarrow}}{\mathrm{B}}$) in the Voigt geometry. In the Faraday geometry, the resonances were found to be of approximately equal amplitude for both ${\ensuremath{\sigma}}_{R}$ and ${\ensuremath{\sigma}}_{L}$ circularly polarized light. A large variety of intra-conduction-band magneto-optical experimental work has been unified and explained using a modified Pidgeon-Brown energy-band model and only one set of band parameters. These include cyclotron resonance, combined resonance, cyclotron-resonance harmonics, combined resonance harmonics, electron-spin resonance, and PACRH data from a wide variety of authors. The resulting set of energy-band parameters are ${E}_{g}=235.2$ meV, ${E}_{p}=23.2$ eV, $\ensuremath{\Delta}=0.803$ eV, ${\ensuremath{\gamma}}_{1}=3.25$, ${\ensuremath{\gamma}}_{2}=\ensuremath{-}0.2$, ${\ensuremath{\gamma}}_{3}=0.9$, $\ensuremath{\kappa}=\ensuremath{-}1.3$, $F=\ensuremath{-}0.2$, $q=0.0$, ${N}_{1}=\ensuremath{-}0.55$. These parameters are also shown to explain the variation of the effective $g$ factor with magnetic field. In addition, these parameters also quantitatively explain recent two-photon magnetoabsorption data and recent intra-valence-band data.

D. G. Seiler

Papers

Inversion-asymmetry splitting of the conduction band in InSb

Determination of the g factor from unsplit Shubnikov-de Haas oscillations in n − I n S b

Intra-conduction-band magneto-optical studies of InSb

Shubnikov-de Haas effect in n-InAs and n-GaSb

Two-photon magnetoabsorption spectroscopy in n-InSb with cw CO 2 lasers