In this paper, we review the current status of the hybrid silicon photonic integration platform with emphasis on its prospects for increased integration complexity. The hybrid silicon platform is maturing fast as increasingly complex circuits are reported with tens of integrated components including on-chip lasers. It is shown that this platform is well positioned and holds great potential to address future needs for medium-scale photonic integrated circuits.

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Hybrid Silicon Photonic Integrated Circuit Technology

We present silicon photonic integrated circuits (PICs) based coherent optical transmitters and receivers for high-speed long-distance fiber optical transmission. High-degree photonic integration is achieved by monolithically integrating silicon electro-optic modulators, germanium photo detectors, silicon nitride-assisted on-chip polarization rotators, thermal phase shifters, and various passive silicon optical devices on a single wafer platform. We demonstrate the use of these PICs for modulating and detecting 112-Gb/s polarization-division-multiplexed quadrature phase-shift keying (PDM-QPSK) and 224-Gb/s PDM 16-ary quadrature amplitude modulation (PDM-16-QAM) signals. Transmission and coherent detection of a 112-Gb/s PDM-QPSK signal over 2560-km standard single-mode fiber is also demonstrated. The high-degree photonic integration for silicon PICs promises small-form-factor and low-power-consumption transceivers for future coherent systems that demand high cost efficiency and energy efficiency.

Monolithic Silicon Photonic Integrated Circuits for Compact 100 $^{+}$ Gb/s Coherent Optical Receivers and Transmitters

Similarities and differences between photonic and microelectronic integration technology are discussed and a vision of the development of InP-based photonic integration in the coming decade is given.

/pdf/generic-foundry-model-for-inp-based-photonics-4jw9trm6s4.pdf

Generic foundry model for InP-based photonics

In this paper, the current state of the art for large-scale InP photonic integrated circuits (PICs) is reviewed with a focus on the devices and technologies that are driving the commercial scaling of highly integrated devices. Specifically, the performance, reliability, and manufacturability of commercial 100-Gb/s dense wavelength-division-multiplexed transmitter and receiver PICs are reviewed as well as next- and future-generation devices (500 Gb/s and beyond). The large-scale PIC enables significant reductions in cost, packaging complexity, size, fiber coupling, and power consumption which have enabled benefits at the component and system level.

Current Status of Large-Scale InP Photonic Integrated Circuits

We report novel high-bandwidth InP-based Mach–Zehnder modulator and in-phase/quadrature (IQ) modulators that we realized by combining an n-i-p-n heterostructure and a capacitively loaded traveling wave electrode. The extremely low electrical and optical loss structure enhances the 3-dB electro-optic bandwidth of over 67 GHz without degrading other properties such as driving voltage and optical loss. The modulator also exhibits a static extinction ratio of over 24 dB with a V π of less than 1.5 V for the entire C-band. Furthermore, we demonstrate the first 120-Gbaud rate IQ modulation without optical pre equalization, and 100-Gb/s non-return-to-zero on-off keying modulation with a dynamic extinction ratio of over 10 dB.

Over 67 GHz Bandwidth and 1.5 V Vπ InP-Based Optical IQ Modulator With n-i-p-n Heterostructure

A monolithically integrated InP 90° hybrid incorporating waveguide balanced photodiodes is presented. Stable performance is achieved over a wavelength range from 1530 nm to 1565 nm.

First monolithic InP-based 90°-hybrid OEIC comprising balanced detectors for 100GE coherent frontends

We demonstrate excellent 40 Gbit/s operation of a packaged InP Mach-Zehnder-Modulator with a low rms jitter of 730 fs. A modulator with 63 GHz on-chip bandwidth is shown as a step towards 80 Gbit/s transmission.

1.55μm Mach-Zehnder Modulators on InP for Optical 40/80 Gbit/s Transmission Networks

An InP-based 90° hybrid OEIC with integrated pin-photodiodes is presented. It operates unaffected in the temperature range of 15°–35° C, offering low PDL <1 dB, and stable performance in the wavelengths of 1530 nm to 1565 nm.

Athermal InP-based 90°-hybrid Rx OEICs with pin-PDs >60 GHz for coherent DP-QPSK photoreceivers

We show the positive impact of differential driving on the optical QPSK signal performance. For the first time, an EVM of <6% at 32 GBd QPSK has been achieved for a low power InP-IQM design, enabling small form factor transmitters.

A performance comparison of single-ended- and differential driving scheme at 64 Gbit/s QPSK modulation for InP-based IQ-Mach-Zehnder modulators in serial-push-pull configuration

A monolithically integrated InP 90°hybrid OEIC incorporating waveguides with different etch depths connected by newly designed tapers is presented.

http://ieeexplore.ieee.org/iel5/5963766/5978276/05978321.pdf

D. Hoffmann

Papers

First monolithic InP-based 90°-hybrid OEIC comprising balanced detectors for 100GE coherent frontends

1.55μm Mach-Zehnder Modulators on InP for Optical 40/80 Gbit/s Transmission Networks

Athermal InP-based 90°-hybrid Rx OEICs with pin-PDs >60 GHz for coherent DP-QPSK photoreceivers

A performance comparison of single-ended- and differential driving scheme at 64 Gbit/s QPSK modulation for InP-based IQ-Mach-Zehnder modulators in serial-push-pull configuration

Design improvements for InP-based 90°-hybrid OEICs for 100GE coherent frontends