Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

Fast parallel algorithms for short-range molecular dynamics

An overview of the extended/generalized finite element method (GEFM/XFEM) with emphasis on methodological issues is presented. This method enables the accurate approximation of solutions that involve jumps, kinks, singularities, and other locally non-smooth features within elements. This is achieved by enriching the polynomial approximation space of the classical finite element method. The GEFM/XFEM has shown its potential in a variety of applications that involve non-smooth solutions near interfaces: Among them are the simulation of cracks, shear bands, dislocations, solidification, and multi-field problems. Copyright © 2010 John Wiley & Sons, Ltd.

The extended/generalized finite element method: An overview of the method and its applications

Review of State of Art of Smart Structures and Integrated Systems

A strain sensor has been fabricated from a polymer nanocomposite with multiwalled carbon nanotube (MWNT) fillers. The piezoresistivity
of this nanocomposite strain sensor has been investigated based on an improved three-dimensional (3D) statistical resistor network
model incorporating the tunneling effect between the neighboring carbon nanotubes (CNTs), and a fiber reorientation model. The
numerical results agree very well with the experimental measurements. As compared with traditional strain gauges, much higher sensitivity
can be obtained in the nanocomposite sensors when the volume fraction of CNT is close to the percolation threshold. For a small
CNT volume fraction, weak nonlinear piezoresistivity is observed both experimentally and from numerical simulation. The tunneling
effect is considered to be the principal mechanism of the sensor under small strains.

Tunneling effect in a polymer/carbon nanotube nanocompositestrain sensor

The paper provides a state of the art review of guided wave based structural health monitoring (SHM). First, the fundamental concepts of guided wave propagation and its implementation for SHM is explained. Following sections present the different modeling schemes adopted, developments in the area of transducers for generation, and sensing of wave, signal processing and imaging technique, statistical and machine learning schemes for feature extraction. Next, a section is presented on the recent advancements in nonlinear guided wave for SHM. This is followed by section on Rayleigh and SH waves. Next is a section on real-life implementation of guided wave for industrial problems. The paper, though briefly talks about the early development for completeness,. is primarily focussed on the recent progress made in the last decade. The paper ends by discussing and highlighting the future directions and open areas of research in guided wave based SHM.

https://iopscience.iop.org/article/10.1088/0964-1726/25/5/053001/pdf

Guided wave based structural health monitoring: A review

Engineering of electronic energy band structure in graphene based nanostructures has several potential applications. Substrate induced bandgap opening in graphene results several optoelectronic properties due to the inter-band transitions. Various defects like structures, including Stone-Walls and higher-order defects are observed when a graphene sheet is exfoliated from graphite and in many other growth conditions. Existence of defect in graphene based nanostructures may cause changes in optoelectronic properties. Defect engineered graphene on silicon system are considered in this paper to study the tunability of optoelectronic properties. Graphene on silicon atomic system is equilibrated using molecular dynamics simulation scheme. Based on this study, we confirm the existence of a stable super-lattice. Density functional calculations are employed to determine the energy band structure for the super-lattice. Increase in the optical energy bandgap is observed with increasing of order of the complexity in the defect structure. Optical conductivity is computed as a function of incident electromagnetic energy which is also increasing with increase in the defect order. Tunability in optoelectronic properties will be useful in understanding graphene based design of photodetectors, photodiodes and tunnelling transistors.

Optoelectronic Properties of Graphene on Silicon Substrate: Effect of Defects in Graphene

In this work, we propose a constitutive model to describe the behavior of Piezoelectric Fiber Reinforced Composite
(PFRC) material consisting of elasto-plastic matrix reinforced by strong elastic piezoelectric fibers. Computational
efficiency is achieved using analytical solutions for elastic stifness matrix derived from Variational
Asymptotic Methods (VAM). This is extended to provide Structural Health Monitoring (SHM) based on plasticity
induced degradation of flapping frequency of PFRC. Overall this work provides an effective mathematical
tool that can be used for structural self-health monitoring of plasticity induced flapping degradation of PFRC
flapping wing MAVs. The developed tool can be re-calibrated to also provide SHM for other forms of failures
like fatigue, matrix cracking etc.

Self-actuating and self-diagnosing plastically deforming piezo-composite flapping wing MAV

In this paper we discuss a new technique to image the surfaces of metallic substrates using field emission from a pointed array of carbon nanotubes (CNTs). We consider a pointed height distribution of the CNT array under a diode configuration with two side gates maintained at a negative potential to obtain a highly intense beam of electrons localized at the center of the array. The CNT array on a metallic substrate is considered as the cathode and the test substrate as the anode. Scanning the test Substrate with the cathode reveals that the field emission current is highly sensitive to the surface features with nanometer resolution. Surface features of semi-circular, triangular and rectangular geometries (projections and grooves) are considered for simulation. This surface scanning/mapping technique can be applied for surface roughness measurements with nanoscale accuracy. micro/nano damage detection, high precision displacement sensors, vibrometers and accelerometers. among other applications.

/pdf/high-resolution-surface-imaging-using-a-carbon-nanotube-1tzi2weuww.pdf

High Resolution Surface Imaging Using a Carbon Nanotube Array with Pointed Height distribution

Perovskite solar cell performance analysis via interface engineering employing MOF-composite

Effect of stress and interface defects on photo luminescence property of a silicon nano-crystal (Si-nc) embedded in amorphous silicon dioxide (a-SiO2) are studied in this paper using a self-consistent quantum-continuum based modeling framework. Si-ncs or quantum dots show photoluminescence at room temperature. Whether its origin is due to Si-nc/a-SiO2 interface defects or quantum confinement of carriers in Si-nc is still an outstanding question. Earlier reports have shown that stresses greater than 12 GPa change the indirect energy band gap structure of bulk Si to a direct energy band gap structure. Such stresses are observed very often in nanostructures and these stresses influence the carrier confinement energy significantly. Hence, it is important to determine the effect of stress in addition to the structure of interface defects on photoluminescence property of Si-nc. In the present work, first a Si-nc embedded in a-SiO2 is constructed using molecular dynamics simulation framework considering the actual conditions they are grown so that the interface and residual stress in the structure evolves naturally during formation. We observe that the structure thus created has an interface of about 1 nm thick consisting of 41.95% of defective states mostly Sin+ (n = 0 to 3) coordination states. Further, both the Si-nc core and the embedding matrix are observed to be under a compressive strain. This residual strain field is applied in an effective mass k.p Hamiltonian formulation to determine the energy states of the carriers. The photo luminescence property computed based on the carrier confinement energy and interface energy states associated with defects will be analysed in details in the paper.

D. Roy Mahapatra

Papers

Optoelectronic Properties of Graphene on Silicon Substrate: Effect of Defects in Graphene

Self-actuating and self-diagnosing plastically deforming piezo-composite flapping wing MAV

High Resolution Surface Imaging Using a Carbon Nanotube Array with Pointed Height distribution

Perovskite solar cell performance analysis via interface engineering employing MOF-composite

Effect of Stress and Interface defects on Photo Luminescence of Si nano-crystals embedded in SiO2