A review on g-C3N4-based photocatalysts

As a fascinating conjugated polymer, graphitic carbon nitride (g-C3N4) has been the hotspot in the materials science as a metal-free and visible-light-responsive photocatalyst. Pure g-C3N4 suffers from the insufficient sunlight absorption, low surface area and the fast recombination of photo-induced electron-hole pairs, resulting in low photocatalytic activity. Element doping is known to be an efficient method to tune the unique electronic structure and band gap of g-C3N4, which considerably broaden the light responsive range and enhance the charge separation. This review summarizes the recent progress in the development of efficient and low cost doped g-C3N4 systems in various realms such as photocatalytic hydrogen evolution, reduction of carbon dioxide, photocatalytic removal of contaminants in wastewater and gas phase. Typically, metal doping, nonmetal doping, co-doping and heterojunction based on doped g-C3N4 have been explored to simultaneously tune the crystallographic, textural and electronic structures for improving photocatalytic activity by enhancing the light absorption, facilitating the charge separation and transportation and prolonging the charge carrier lifetime. Finally, the current challenges and the crucial issues of element doped g-C3N4 photocatalysts that need to be addressed in future research are presented. This review presented herein can pave a novel avenue and add invaluable knowledge to the family of element doped g-C3N4 for the develop of more effective visible-light-driven photocatalysts.

Doping of graphitic carbon nitride for photocatalysis: A reveiw

Artificial Z-scheme photocatalyst can not only reduce the recombination of photogeneraged electron–holepairs, but also retain prominent redox ability. In this study, direct solid-state dual Z-scheme WO3/g-C3N4/Bi2O3 photocatalyst was successfully synthesized by one step co-calcination stratage using tungstic acid, melamine and bismuth (III) nitrate pentahydrate as the precursors. Surface, morphological, and structural properties of the resulting materials were comprehensive characterized by XRD, XPS, SEM, TEM, UV–vis diffuse reflection spectroscopy, BET surface areas, photoluminescence and ESR analysis. The WO3/g-C3N4/Bi2O3 composite exhibited superior photocatalytic activities for tetracycline degradation than that of pure g-C3N4, WO3, Bi2O3 and their binary composites under visible light irradiation. The enhanced photocatalytic performance of WO3/g-C3N4/Bi2O3 composite can be ascribed to improved visible light absorption, increased surface area and enhanced separation efficiency of photo-generated electron-hole pairs. In addition, the photocatalyst exhibits high stability and reusability. On the basis of the results, a novel direct solid-state dual Z-scheme photocatalytic mechanism was also proposed.

In-situ synthesis of direct solid-state dual Z-scheme WO3/g-C3N4/Bi2O3 photocatalyst for the degradation of refractory pollutant

Graphite carbon nitride (g-C3 N4 ) is a promising candidate for photocatalytic hydrogen production, but only shows moderate activity owing to sluggish photocarrier transfer and insufficient light absorption. Herein, carbon quantum dots (CQDs) implanted in the surface plane of g-C3 N4 nanotubes were synthesized by thermal polymerization of freeze-dried urea and CQDs precursor. The CQD-implanted g-C3 N4 nanotubes (CCTs) could simultaneously facilitate photoelectron transport and suppress charge recombination through their specially coupled heterogeneous interface. The electronic structure and morphology were optimized in the CCTs, contributing to greater visible light absorption and a weakened barrier of the photocarrier transfer. As a result, the CCTs exhibited efficient photocatalytic performance under light irradiation with a high H2 production rate of 3538.3 μmol g-1  h-1 and a notable quantum yield of 10.94 % at 420 nm.

Carbon Quantum Dot Implanted Graphite Carbon Nitride Nanotubes: Excellent Charge Separation and Enhanced Photocatalytic Hydrogen Evolution

Hydrogen (H2) production via solar water splitting is one of the most ideal strategies for providing sustainable fuel because this requires only water and sunlight. In achieving high-yield production of hydrogen as a recyclable energy carrier, the nanoscale design of semiconductor (SC) materials plays a pivotal role in both photoelectrochemical (PEC) and photocatalytic (PC) water splitting reactions. In this context, the advent of two-dimensional (2D) materials with remarkable electronic and optical characteristics has attracted great attention for their application to PEC/PC systems. The elaborate design of combined 2D layered materials interfaced with other SCs can markedly enhance the PEC/PC efficiencies via bandgap alteration and heterojunction formation. Three classes of 2D materials including graphene, transition metal dichalcogenides (TMDs), and graphitic carbon nitride (g-C3N4), and their main roles in the photoelectrocatalytic production of H2, are discussed in detail herein. We highlight the various roles of these 2D materials, such as enhanced light harvesting, suitable band edge alignment, facilitated charge separation, and stability during the water splitting reaction, in various SC/2D photoelectrode and photocatalytic systems. The roles of emerging 2D nanomaterials, such as 2D metal oxyhalides, 2D metal oxides, and layered double hydroxides, in PEC H2 production are also discussed.

Two-dimensional materials in semiconductor photoelectrocatalytic systems for water splitting

We report on a novel MoS2/S-doped g-C3N4 heterojunction film with high visible-light photoelectrochemical (PEC) performance. The heterojunction films are prepared by CVD growth of S-doped g-C3N4 film on indium–tin oxide (ITO) glass substrates, with subsequent deposition of a low bandgap, 1.69 eV, visible-light response MoS2 layer by hydrothermal synthesis. Adding thiourea into melamine as the coprecursor not only facilitates the growth of g-C3N4 films but also introduces S dopants into the films, which significantly improves the PEC performance. The fabricated MoS2/S-doped g-C3N4 heterojunction film offers an enhanced anodic photocurrent of as high as ∼1.2 × 10–4 A/cm2 at an applied potential of +0.5 V vs Ag/AgCl under the visible light irradiation. The enhanced PEC performance of MoS2/S-doped g-C3N4 film is believed due to the improved light absorption and the efficient charge separation of the photogenerated charge at the MoS2/S-doped g-C3N4 interface. The convenient preparation of carbon nitride based ...

Dan Wang

Papers

Fabrication and Enhanced Photoelectrochemical Performance of MoS2/S-Doped g-C3N4 Heterojunction Film