A method for fabricating a semiconductor device, in which a lifting phenomenon can be prevented from occurring in forming an amorphous carbon film on an etched layer having tensile stress. According to the invention, since a compression stress on the etched layer or the amorphous carbon film can be reduced or a compression stress film is formed between the etched layer or the amorphous carbon film to prevent a lifting phenomenon from occurring and thus another pattern can be formed to fabricate a highly integrated semiconductor device.

Method for Fabricating Semiconductor Device

A system for implanting ions into a target element including a source arrangement for producing an ion beam; a beam analyzing arrangement for receiving the ion beam and selectively separating various ion species in the beam on the basis of mass to produce an analyzed beam; and a beam resolving arrangement disposed in the path of the analyzed beam for permitting a preselected ion species to pass to the target element. The analyzing arrangement has an ion dispersion plane associated therewith. The source arrangement has an associated ion emitting envelope including an area of substantial extension in a plane parallel to the ion dispersion plane and producing ions entering said analyzing arrangement which are travelling substantially either toward or from a common apparent line object lying in a plane perpendicular to the ion dispersion plane.

Apparatus and methods for ion implantation

Implantation apparatus for cold cathode plasma immersion ion implantation (C 2 PI 3 ) without a continuous plasma using very short high voltage, low duty cycle ionization pulses, in conjunction with a synchronously produced electron flow to neutralize positively charged wafer surfaces.

Plasma immersion ion implantation (PI3) apparatus

Plasma doping apparatus includes a plasma doping chamber, a platen mounted in the plasma doping chamber for supporting a workpiece such as a semiconductor wafer, a source of ionizable gas coupled to the chamber, an anode spaced from the platen and a pulse source for applying voltage pulses between the platen and the anode. The voltage pulses produce a plasma having a plasma sheath in the vicinity of the workpiece. The voltage pulses accelerate positive ions across the plasma sheath toward the platen for implantation into the workpiece. The plasma doping apparatus includes at least one Faraday cup positioned adjacent to the platen for collecting a sample of the positive ions accelerated across the plasma sheath. The sample is representative of the dose of positive ions implanted into the workpiece. The Faraday cup may include a multi-aperture cover for reducing the risk of discharge within the interior chamber of the Faraday cup. The Faraday cup may be configured to produce a lateral electric field within the interior chamber for suppressing escape of electrons, thereby improving measurement accuracy.

Dose monitor for plasma doping system

An apparatus is described which makes possible the precise sputter etching and imaging of insulating and other targets, using a finely focused beam of ions produced from a liquid metal ion source. This apparatus produces and controls a submicron beam of ions to precisely sputter etch the target. A beam of electrons directed on the target neutralizes the charge created by the incident ion beam. Imaging of the target surface and ultra-precise control of the etching process is achieved by monitoring the particles that are sputtered from the target surface.

Focused ion beam processing

An apparatus for the enhanced neutralization of a positively charged particle beam has a source of primary electrons which are directed at a dummy target positioned adjacent the ion beam. The secondary electrons have a low energy and are susceptible to being entrapped within the volume of the positively charged beam. The ion beam attracts these low energy electrons until effective beam neutralization is achieved. The ions in the beam are individually neutralized when the beam strikes the target.

Apparatus for enhanced neutralization of positively charged ion beam

Method of and apparatus for scanning a charged particle beam over a semiconductor wafer in a prescribed pattern. A triangular waveform, including alternating positive and negative ramp portions of constant slope and controllable time durations, is applied to a horizontal deflection system and produces horizontal scanning of the beam. The time durations of the ramp portions determine the length of the horizontal scan lines and are controlled according to a predetermined sequence so as to provide the prescribed pattern. The triangular waveform is provided by an integrator which receives a square wave from a frequency source of controllable frequency. The predetermined sequence is stored in a read only memory which controls the frequency of the frequency source. At the completion of each ramp portion, a voltage applied to a vertical deflection system is incremented so as to step the beam vertically up or down.

David Arthur Robertson

Papers

Apparatus for enhanced neutralization of positively charged ion beam

Beam scanning method and apparatus for ion implantation

Verfahren zur strahlabtastung und vorrichtung zu ionenimplantation

Procede et appareil de balayage par un faisceau pour l'implantation ionique