David L. O'Meara

TL;DR: In this paper, a low temperature chemical vapor deposition process comprising heating a substrate upon which deposition is desired to a temperature of from about 350° C. to about 700° C is described.

TL;DR: In this paper, a chemical vapor deposition process for depositing silicon dioxide comprising the steps of heating a substrate upon which deposition is desired to a temperature of from about 325° C to about 700° C. in a vacuum having a pressure from about 0.1 to about 1.5 torr, and introducing a silane selected from the group consisting of alkylsilane, aryl- or aralkyl- moiety, and oxygen or carbon dioxide into the vacuum.

TL;DR: In this article, a method of producing a silicon nitride film on the surface of a substrate by thermal decomposition at said surface of the compound of the class ##STR1##, wherein R 1 R 2 and R 3 are hydrogen azido, 1 to 6 carbon alkyl, phenyl, or 7 to 10 carbon alkaryl, at least one of R 1, R 2, and r 3 being 1-6 carbon al-kyl or 7-10 carbon alkyl, ethyltriazidosilane being uniquely superior, is disclosed.

TL;DR: A low temperature chemical vapor deposition process comprising heating in a chemical vapor depositon reactor a substrate upon which deposition is desired to a temperature of from about 550° C. to about 750° C as mentioned in this paper.