A method for growing films for use in integrated circuits using atomic layer deposition and a subsequent converting step is described. In an embodiment, the subsequent converting step includes oxidizing a metal atomic layer to form a metal oxide layer. The atomic layer deposition and oxidation step are then repeated to produce a metal oxide layer having sufficient thickness for use as a metal oxide layer in an integrated circuit. The subsequent converting step, in an embodiment, includes converting the atomic deposition layer by exposing it to one of nitrogen to form a nitride layer, carbon to form a carbide layer, boron to form a boride layer, and fluorine to form a fluoride layer. Systems and devices for performing the method, semiconductor devices so produced, and machine readable media containing the method are also described.

Atomic layer deposition and conversion

The present invention includes a method for bonding one semiconductor surface to a second semiconductor surface. The method includes providing a first article that has a semiconductor surface and a second article that has a semiconductor surface. The semiconductor surfaces are annealed with an energy source wherein energy is confined to the semiconductor surfaces. The annealed surfaces are bonded to each other.

Low temperature silicon wafer bond process with bulk material bond strength

Integrated circuits, the key components in thousands of electronic and computer products, are generally built layer by layer on a silicon substrate. One common technique for forming layers is called chemical-vapor deposition (CVD.) Conventional CVD systems not only form layers that have non-uniform thickness, but also have large chambers that make the CVD process wasteful and slow. Accordingly, the inventor devised new CVD systems, methods, and apparatuses. One exemplary CVD system includes an outer chamber, a substrate holder, and a unique gas-distribution fixture. The fixture includes a gas-distribution surface having holes for dispensing a gas and a gas-confinement member that engages or cooperates with the substrate holder to form an inner chamber within the outer chamber. The inner chamber has a smaller volume than the outer chamber, which not only facilitates depositions of more uniform thickness, but also saves gas and speeds up the deposition process.

Methods, systems, and apparatus for uniform chemical-vapor depositions

A method and apparatus for removing surface contaminants from the surface of a substrate by high-energy irradiation is provided. The invention enables removal of surface contaminants without altering of the substrate's underlying molecular structure. The source of high-energy irradiation may comprise a pulsed laser.

Removal of surface contaminants by irradiation from a high-energy source

A method of cleaning a substrate surface, the cleaning being done photoreactively without damaging the surface. A laser beam of UV radiation is delivered at an acute angle to the surface of the substrate, the beam striking the surface at a long and narrow reaction region. The beam and the substrate are moved relative to one another to cause the beam to sweep the surface. While the beam is sweeping the surface, a flow of a reactant gas is provided at the reaction region so that the gas is excited by the UV laser beam. The acute angle of the beam is of a value such that foreign material is removed without essentially damaging the surface of the substrate or leaving a residue that would inhibit further processing of the substrate surface.

Photoreactive surface processing

This invention relates to a new method for removing surface impurities from crystalline silicon or germanium articles, such as off-the-shelf p- or n-type wafers to be doped for use as junction devices. The principal contaminants on such wafers are oxygen and carbon. The new method comprises laser-irradiating the contaminated surface in a non-reactive atmosphere, using one or more of Q-switched laser pulses whose parameters are selected to effect melting of the surface without substantial vaporization thereof. In a typical application, a plurality of pulses is used to convert a surface region of an off-the-shelf silicon wafer to an automatically clean region. This can be accomplished in a system at a pressure below 10 -8 Torr, using Q-switched ruby-laser pulses having an energy density in the range of from about 60 to 190 MW/cm 2 .

David M. Zehner

Papers

Method using laser irradiation for the production of atomically clean crystalline silicon and germanium surfaces