A lightweight, biodegradable packaging material and method for manufacturing the same. The product is made from an initial or starting material which is principally corn grit that is mixed with a binding agent and water extruded under heat and pressure and allowed to expand to form the packaging material.

Biodegradable and water soluble packaging material

A chemical vapor deposition (CVD) process for preparing fiber-reinforced ceramic composites. A specially designed apparatus provides a steep thermal gradient across the thickness of a fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

Process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition

An apparatus for producing a single crystal ingot grown by the Czochralski method includes a plurality of grip arms each having a grip finger engageable with a downwardly facing engagement step formed on an upper part of the single crystal, and a ring slidably fitted around a plurality of grip arms to hold the grip arms in a closed position in which the engagement step of the single crystal is firmly gripped by the grip fingers against detachment. The apparatus having such a ring is particularly advantageous when used for the production of a heavy single crystal ingot in which the grip arms are forced to spread apart by the weight of the single crystal ingot.

Apparatus for producing czochralski-grown single crystals

A method of manufacturing silicon, comprising the steps of depositing the silicon by bringing silanes into contact with the surface of a base material while heating and holding the surface of the base material at the temperature less than the melting point of the silicon and raising the temperature of the surface of the base material to melt a part or all of the deposited silicon so as to drop the silicon from the surface of the base material for collection.

Method of manufacturing silicon

A novel capillary die and crystal growing method are provided for growing a hollow cristalline body by EFG. Inner and outer annular moats (114, 116) surround the die tip. Passageways (180) are provided for supplying melt (29) to those moats from a crucible (24), so that melt (29) in said moats will wet and cover the inner and outer exterior surfaces of the die tip during growth of a hollow crystalline body. The novel die may be constructed so as to have a lower die tip and a shorter capillary than EFG dies heretofore used to successfully grow hollow bodies. The die design facilitates keeping the temperature of the die tip substantially uniform about its circumference, thereby improving uniformity of thickness of the wall of the crystalline body (112) grown from a film of melt (110) on the die tip. The moats reduce the likelihood of the growth process being interrupted or adversely affected by flooding of the die. In the event the growth meniscus breaks, liquid silicon is captured in the moats, thereby preventing or reducing the likelihood of flooding of the die.

Wet-tip die for efg crystal growth apparatus

A new method and apparatus for producing silicon are disclosed which are characterized by using a silicon tube as the reaction chamber and disproportionating a gaseous silicon compound so as to produce silicon and deposit the same on the inner surface of the reaction chamber.

Manufacture of silicon on the inside of a tube

A novel cartridge containing selected crystal growth components is provided for use in a crystal growing system. The cartridge is adapted to be mounted directly to a crystal pulling mechanism and is arranged so that it can be inserted into a furnace containing a supply of molten feed material. The cartridge includes a crystal growing die, a die holder, and associated crystal growth components arranged to permit rapid growth of selected shape. The cartridge is assembled outside of the furnace at room temperature and can be inserted into and removed from the furnace without having to cool the latter.

Cartridge and furnace for crystal growth

A temperature profile controller is provided for cooling a crystal as it is pulled from a melt so that a substantially linear temperature gradient is established and maintained along the length of the crystal as it is cooled, whereby to prevent or reduce the occurrence of residual stresses in the crystal.

David N. Jewett

Papers

Manufacture of silicon on the inside of a tube

Cartridge and furnace for crystal growth

Method for reducing residual stresses in crystals