An IGBT chip structure and control method thereof. The IGBT chip structure comprises an IGBT unit composed of an MOS field effect transistor and a triode, and further comprises a control switch Q, electrodes N2+ and an isolation cover, wherein the IGBT unit is provided inside the isolation cover, the isolation cover is provided in the electrodes N2+, and the control switch Q is connected to an electrode N2+ and the triode respectively. If the IGBT unit is in forward conduction, the control switch Q is in an off-state; if the IGBT unit is in reverse conduction, the control switch Q is in an on-state. The present invention essentially prevents snapback without influencing performance parameters, and effectively integrates a diode inside an IGBT, thus enabling the IGBT to have a low on-state voltage drop and a fast switching speed, and improving the reliability of the device.

Igbt chip structure and control method thereof

The present invention discloses a control method of an IGBT chip. The control method of the IGBT chip is characterized in that when an IGBT is in the positive conduction, a control switch Q is in a turn-off state, a PN junction J2 is in a reverse bias state, a PN junction J1 is in a positive bias state, and an electric field does not influence an electrode N2 because of the effect of an isolating cover; when the IGBT is located in the reverse conduction, the control switch Q is in a turn-on state, the PN junction J1 is in the reverse bias state, the PN junction J2 is in the positive bias state, and after flowing out to be blocked by the influence of a P potential barrier, the electrons move towards the electrode N2 , and move and flow out via the control switch Q. The control method of the IGBT chip of the present invention solves the snapback basically while not influencing the performance parameters, and enables a diode to be integrated in the IGBT effectively, thereby really realizing the situation that the IGBT has the low forward voltage drop and also has a good switching speed, and improving the reliability of a device.

Deng Huaxian

Papers

Control method of IGBT chip