Redox-based resistive switching memories (ReRAMs) are strongest candidates for the next-generation nonvolatile memories fulfilling the criteria for fast, energy efficient, and scalable green IT. These types of devices can also be used for selector elements, alternative logic circuits and computing, and memristive and neuromorphic operations. ReRAMs are composed of metal/solid electrolyte/metal junctions in which the solid electrolyte is typically a metal oxide or multilayer oxides structures. Here, this study offers an effective and cheap electrochemical approach to fabricate Ta/Ta2O5-based devices by anodizing. This method allows to grow high-quality and dense oxide thin films onto a metallic substrates with precise control over morphology and thickness. Electrochemical-oxide-based devices demonstrate superior properties, i.e., endurance of at least 106 pulse cycles and/or 103I–V sweeps maintaining a good memory window with a low dispersion in ROFF and RON values, nanosecond fast switching, and data retention of at least 104 s. Multilevel programing capability is presented with both I–V sweeps and pulse measurements. Thus, it is shown that anodizing has a great prospective as a method for preparation of dense oxide films for resistive switching memories.

Electrochemical Tantalum Oxide for Resistive Switching Memories

Voltage control of room-temperature ferromagnetism has remained a big challenge which will greatly influence the multifunctional memory devices. In this paper, porous TiO2 thin films were deposited by dc-reactive magnetron sputtering onto ordered porous anodic alumina (PAA) substrates. Voltage-driving room-temperature resistance and magnetization switching without external magnetic field are simultaneously found in an Ag/TiO2/PAA/Al (Ag/TP/Al) device. Further analysis indicates that the formation/rupture of oxygen vacancy defect-based conductive filaments would be responsible for the changes of resistivity and magnetization. Our present results suggest that the TP nanoporous composite film material may therefore be used to achieve voltage control of magnetism and resistance switching in the future multifunctional memory devices. The Ag/TP/Al devices can also be used for new spintronic devices, neuromorphic operations, and alternative logic circuits and computing.

Voltage-Driven Room-Temperature Resistance and Magnetization Switching in Ceramic TiO2/PAA Nanoporous Composite Films

Highly ordered anodic hafnium oxide (AHO) nanoporous or nanotubes were synthesized by electrochemical anodization of Hf foils. The growth of self-ordered AHO was investigated by optimizing a key electrochemical anodization parameter, the solvent-based electrolyte using: Ethylene glycol, dimethyl sulfoxide, formamide and N-methylformamide organic solvents. The electrolyte solvent is here shown to highly affect the morphological properties of the AHO, namely the self-ordering, growth rate and length. As a result, AHO nanoporous and nanotubes arrays were obtained, as well as other different shapes and morphologies, such as nanoneedles, nanoflakes and nanowires-agglomerations. The intrinsic chemical-physical properties of the electrolyte solvents (solvent type, dielectric constant and viscosity) are at the base of the properties that mainly affect the AHO morphology shape, growth rate, final thickness and porosity, for the same anodization voltage and time. We found that the interplay between the dielectric and viscosity constants of the solvent electrolyte is able to tailor the anodic oxide growth from continuous-to-nanoporous-to-nanotubes.

https://www.mdpi.com/2079-4991/10/2/382/pdf

Tailoring the Anodic Hafnium Oxide Morphology Using Different Organic Solvent Electrolytes.

The demand for new responsive materials is continuously growing in several areas as a result of approaching the physical limits of technologies, which now calls for a drastic change of strategy. Here, we report on memory responsive oxide-in-oxide nanostructured films obtained by radio-frequency sputtering of a 7.5Li2O–2.5Na2O–20Ga2O3–45GeO2–25SiO2 (mol%) glass target produced by melt quenching. Atomic force microscopy and scanning electron microscopy show that as-deposited oxide layers exhibit native nanophase separation, with the occurrence of Ga-rich oxide nanostructures – about 15 nm thick and 100 nm in diameter – incorporated in oxide layers about 70 nm thick. Interestingly, despite the wide band gap (above 4 eV), the nanostructured oxide films reveal the formation of unconventional electric field dependent charge transport paths across the material. The frequency and temperature dependence of electric conductivity and dielectric function highlights n-type conduction sustained by charge percolation through the oxide layer. Importantly, the results demonstrate the occurrence of conductivity changes by more than an order of magnitude in a few volts, and trapped charge values up to 1016 electrons per cm3.

Responsive charge transport in wide-band-gap oxide films of nanostructured amorphous alkali-gallium-germanosilicate

New materials for achieving direct electric field control of ferromagnetism and resistance behavior are highly desirable in the development of multifunctional data storage devices. In this paper, HfO2 nanoporous films have been fabricated on porous anodic alumina (PAA) substrates by DC-reactive magnetron sputtering. Electrically induced resistive switching (RS) and modulated room temperature ferromagnetism are simultaneously found in a Ag/HfO2/PAA/Al (Ag/HP/Al) heterostructure. The switching mechanism between low resistance state and high resistance state is generally attributed to the formation/rupture of conductive filaments which may consist of oxygen vacancies. The combination of the electric field control of magnetization change and RS makes HP films possible for the multifunctional data storage media materials.

http://iopscience.iop.org/article/10.1088/1361-6528/aa5a5c/pdf

Di-Ya Pan

Papers

HfO2/porous anodic alumina composite films for multifunctional data storage media materials under electric field control.