Introductory Fourier transform spectroscopy

The question regarding the role of silicon as a residual impurity in high‐purity GaAs is resolved by the use of careful doping experiments and high‐resolution far‐infrared spectroscopy. The results indicate that silicon is readily incorporated into the material as a simple substitutional donor with a binding energy of 5.854 meV and show that silicon is a major, but not necessarily the dominant, residual donor in high‐purity vapor and liquid epitaxial GaAs.

Silicon as a residual donor in high-purity GaAs

A description is given of a method of modifying the mirror‐drive mechanism in a commercial Fourier transform spectrometer in order to double the resolution. Comparative spectra are given which were taken before (resolution ≈ 0.050 cm−1) and after the modification (resolution ≈ 0.026 cm−1).

Donald M. Korn

Papers

Simple Modification to Commercial Michelson Transform Spectrometer for Increased Resolution