A method of fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12), forming on the surface (12) of the silicon substrate (10), by atomic layer deposition (ALD), a seed layer (20;20') characterised by a silicate material and forming, by atomic layer deposition (ALD) one or more layers of a high dielectric constant oxide (40) on the seed layer (20;20').

Method for fabricating a semiconductor structure including a metal oxide interface with silicon

A hand held dental instrument for curing light-curable compounds comprises a housing and an array of solid state, light emitting junctions or dies for generating light having wavelengths within a narrow band of wavelengths (e.g. 400-500 nm). Preferably, a peak wavelength of 470 nm is generated. The device further comprises an optical fiber light pipe for capturing the light and transmitting a beam of the light to a work surface containing a light-curable compound. An optical lens or lenses may be used for focusing the light into the light pipe.

Apparatus and method for curing materials with radiation

The present invention is directed to methods and apparatuses for performing temporal scanning using ultra-short pulsewidth lasers in which only minimal (micro-scale) mechanical movement is required. The invention also relates to methods for obtaining high-accuracy timing calibration, on the order of femtoseconds. A dual laser system is disclosed in which the cavity of one or more of the lasers is dithered, by using a piezoelectric element. A Fabry-Perot etalon is used to generate a sequence of timing pulses used in conjunction with a laser beam produced by the laser having the dithered laser cavity. A correlator correlates a laser pulse from one of the lasers with the sequence of timing pulses to produce a calibrated time scale. The methods and apparatuses of the present invention are applicable to many applications requiring rapid scanning and time calibration, including, but not limited to metrology, characterization of charge dynamics in semiconductors, electro-optic testing of ultrafast electronic and optoelectronic devices, optical time domain reflectometry, and electro-optic sampling oscilloscopes.

Scanning temporal ultrafast delay methods and apparatuses therefor

An optical measurement system for evaluating the surface of a substrate or the thickness and optical characteristics of a thin film layer overlying the substrate includes a light source for generating a light beam, a static polarizing element for polarizing the light beam emanating from the light source, and a measurement system for measuring the light reflected from the substrate location. The measurement system includes a static beam splitting element for splitting the light reflected from the substrate into s-polarized light and p-polarized light. The measurement system further includes two optical sensors for separately measuring the amplitude of the s-polarized light and the intensity of the p-polarized light. A control system analyzes the measured amplitude of the s-polarized light and the p-polarized to determine changes in the topography of substrate or changes in the thickness or optical characteristics of the thin film layer.

Optical measurement system using polarized light

High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same

A laser-diode or laser diode array end-pumped solid-state laser package for optical communications and the like mounted on a common thermally conductive, low thermal expansion base that is temperature stabilized with a thermo-electric cooler. The laser package includes a heat sink, a thermo-electric cooler mounted on the heat sink, a base having a base plate portion mounted on the thermo-electric cooler and a block portion mounted on the base plate portion and optical elements mounted on the base plate and block. The laser active medium and collimating and focusing lenses are mounted with their optically axes collinear in a v-groove formed in a top surface of the block. A laser diode pump is mounted to the base plate and supported so that its laser emission is aligned with the length of the groove. One cavity mirror is a curved reflective coating on an end of the active medium which is transparent to the laser diode pump light and reflective of the active medium generated laser light, while a second cavity mirror is a planar mirror mounted on the base plate. The optical system is aligned at an operating temperature at which the laser diode light's wavelength matches an absorbption band of the active medium. A thermistor on the base plate measures the temperature so that a processor can adjust the electric current applied to the thermo-electric cooler to maintain the base plate temperature at the operating temperature even in extreme ambient temperatures.

Temperature stable solid-state laser package

A laser generates a beam which is actively steered into an optical element having a waveguide which receives and transmits the beam. The waveguide is coupled to an optical fiber which is also actively steered. Both the beam steering and fiber steering mechanisms seek to align the beam from the laser to the fiber for maximum output. The beam steering mechanism features a pair of planar mirrors pivoted at right angles to each other. A precision force transducer will cause desired amounts of pivoting to adjust the beam. The fiber steering mechanism features a pair of flexures, arranged with bending moments of the flexures being at right angles. Electrical signals control the extent of bending in each flexure. The amount of light in the fiber is sensed downstream from both steering mechanisms and compared to an expected amount. The resulting error signal is sensed and used as feedback in a servo loop to iteratively correct the two steering mechanisms in order to achieve the best alignment and maximum light output.

Active alignment system for laser to fiber coupling

Apparatus and method for determining dynamically the polarization vector direction, or polarization vector components and associated temporal phase angle, of a light beam. The apparatus includes a compact polarization beam splitter that receives a beam of light, separates the beam into two perpendicular polarization components and directs these components to a pair of optical detectors and associated circuits that form the sum and difference signals of the electrical signals produced by the optical detectors. This produces a projection of the polarization vector on a given direction. If the light is generally elliptically polarized, use of two such polarization beam splitters and four optical detectors allows reconstruction of the polarization ellipse for the light beam. Alternatively, use of one such polarization beam splitter, two optical detectors and a rotating wave plate in a multiplexed configuration allows reconstruction of the polarization ellipse. The polarization detector is very compact and may be housed in a container that is no more than a few cm. in diameter.

Doron Mick

Papers

Temperature stable solid-state laser package

Active alignment system for laser to fiber coupling

Light wave polarization determination using a hybrid system