An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A vertical color filter detector group according to the present invention is formed on a semiconductor substrate and comprises at least six layers of alternating p-type and n-typed doped regions. PN junctions between the layers operate as photodiodes with spectral sensitivities that depend on the absorption depth versus wavelength of light in the semiconductor. Alternate layers, preferably the n-type layers, are detector layers to collect photo-generated carriers, while the intervening layers, preferably p-type, are reference layers and are connected in common to a reference potential referred to as ground. Each detector group includes a blue-sensitive detector layer at an n-type layer at the surface of the semiconductor, a green-sensitive detector layer at an n-type layer deeper in the semiconductor, and a red-sensitive detector layer at the n-type layer deepest in the semiconductor. The blue-sensitive detector layer at the surface of the semiconductor may have a reference layer only below it, while the red- and green-sensitive detector layers have reference layers above and below them. Three sets of active pixel sensor circuitry are coupled to the three detector layers, such that three active pixel sensors are formed using the group of three co-located detectors of the vertical color filter detector group.

Vertical color filter detector group and array

A system and method provides virtual ripple signal generation for use in voltage regulation applications. Some switch-mode power converters or voltage regulators use output signal ripple to effect voltage regulation. A virtual ripple generator provides this type of voltage regulator with a virtual ripple signal comprising an offset component responsive to actual load voltage, but with a generated AC ripple component of arbitrary magnitude that is independent of actual output signal ripple. Unlike the actual output ripple signal, the generated AC ripple component is not dependent on implementation specifics, such as circuit board layout or output capacitor ESR, and may have its gain set independent of the offset component. The generated AC ripple component is synchronized to the inductor switching actions of the voltage regulator and thus reflects actual inductor phase switching in single and multi-phase regulation applications. Virtual ripple signal generation can include output (load) voltage droop compensation.

Virtual ripple generation in switch-mode power supplies

Some structures and methods to reduce power consumption in devices can be implemented largely by reusing existing bulk CMOS process flows and manufacturing technology, allowing the semiconductor industry as well as the broader electronics industry to avoid a costly and risky switch to alternative technologies. Some of the structures and methods relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced σVT compared to conventional bulk CMOS and can allow the threshold voltage VT of FETs having dopants in the channel region to be set much more precisely. The DDC design also can have a strong body effect compared to conventional bulk CMOS transistors, which can allow for significant dynamic control of power consumption in DDC transistors. Additional structures, configurations, and methods presented herein can be used alone or in conjunction with the DDC to yield additional and different benefits.

Electronic devices and systems, and methods for making and using the same

A photo-therapy device emits photo-therapeutic radiation to treat. living tissue. The device incorporates an array of emitters, the photo emissions of which is dependent on their temperature. Temperature feedback is provided to a voltage supply that supplies current to the emitters, to regulate the voltage supply level and the temperature of the emitters. Additionally, the wavelength of the radiation is dependent on the temperature of the emitters, so the wavelength is moved closer to an optimum wavelength for absorption by the tissue by controlling the temperature of the emitters. Furthermore, the useful life of the emitters is extended by pulsing the emitters on and off by sequentially applying an activation signal to one group of emitters at a time. Also, the device can operate on a wide range of voltage input levels since it utilizes a switching regulator, which can convert a voltage level in the range to the level required to drive the array of emitters. The photo-therapeutic infrared light may be used to treat insect bites and to relieve headaches in human beings. The infrared light emitters may be incorporated into a mouthpiece for treating gum tissues.

Low level light therapy method and apparatus with improved wavelength, temperature and voltage control

Integrated circuits suitable for high-performance applications, especially mixed signal products that have analog and digital sections, are fabricated from a semiconductor structure in which lower buried regions of opposite conductivity types are situated along a lower semiconductor interface between a semiconductive substrate and an overlying lower semiconductive layer. An upper buried region of a selected conductivity type is situated along an upper semiconductor interface between the lower semiconductive layer and an overlying upper semiconductive layer. Another upper buried region of opposite conductivity type to the first-mentioned upper buried region is preferably situated along the upper semiconductor interface. The upper semiconductive layer contains P-type and N-type device regions in which transistor zones are situated. The semiconductor structure is configured so that at least one of each of the P-type and N-type device regions is electrically isolated from the substrate. Complementary bipolar transistors can be integrated with complementary field-effect transistors in the structure.

Fabrication of semiconductor structure having two levels of buried regions

A DC-to-DC converter which includes a switching controller or regulator (implemented as an integrated circuit) and circuitry external to the controller or regulator chip, where the controller or regulator chip includes soft start circuitry but requires no component external thereto (other than the external circuitry present in DC-to-DC converters having no soft start capability) in order to accomplish a soft start. The invention is especially useful where it is impractical or undesirable to implement the controller or regulator chip with a pin dedicated for connection to an external soft start capacitor or other component or circuit for performing a soft start operation. Other aspects of the invention are a controller or regulator chip for use in such a converter, and a method for performing DC-to-DC conversion using such a switching controller or regulator chip and external circuitry coupled to the controller or regulator chip to generate an output potential which increases to a regulated value during a soft start period and remains at the regulated value during steady state operation. Preferably, the controller or regulator chip includes an on-board capacitor, charging circuitry for charging the capacitor during a soft start period, an overvoltage comparator which compares the voltage across the capacitor with a feedback potential (proportional to the output potential of a DC-to-DC converter with which the controller or regulator chip is used), and an OR gate having a first input coupled to receive the output of the comparator and a second input coupled to receive a reset signal which (during steady state operation of the controller or regulator chip) triggers the switching off of the converter's power transistor.

Switching controller chip with internal but not external soft start circuitry and DC to DC converter including such a controller chip

Integrated circuits suitable for high-performance applications, especially mixed signal products that have analog and digital sections, are fabricatable from a semiconductor structure having two levels of buried regions. In a typical embodiment lower buried regions of opposite conductivity types are situated along a lower semiconductor interface between a semiconductive substrate and an overlying lower semiconductive layer. Upper buried regions of opposite conductivity type are similarly situated along an upper semiconductor interface between the lower semiconductive layer and an overlying upper semiconductive layer. The upper semiconductive layer contains P-type and N-type device regions in which transistor zones are situated. The semiconductor structure is normally configured so that at least one of each of the P-type and N-type device regions is electrically isolated from the substrate. Complementary bipolar transistors can be integrated with complementary field-effect transistors in the structure.

Semiconductor structure having two levels of buried regions

A DC-to-DC converter which includes a current mode switching controller or regulator chip (which includes an oscillator producing a ramped voltage which periodically increases at a fixed ramp rate), circuitry including a current sense resistor external to the integrated circuit controller, and ramp adjustment circuitry (including at least one element external to the integrated circuit controller) which sets the effective ramp rate of the oscillator's ramped voltage. The external element of the ramp adjustment circuitry can be a resistor or a capacitor, or circuitry comprising both a resistor and capacitor. Another aspect of the invention is a DC-to-DC conversion method using a current mode switching controller or regulator chip (controller chip) including an oscillator which produces a ramped voltage, and external circuitry (coupled to the controller chip) including a current sense resistor across which a feedback voltage is developed, including the steps of operating the controller chip to switch on the power switch periodically and switch off the power switch at times determined by comparison of a feedback signal indicative of the feedback voltage and an adjustment voltage, with a reference signal indicative of the ramped voltage and a reference potential, where comparison of the feedback signal with the reference signal is effectively comparison of the feedback voltage with the difference between the reference potential and an effective ramped voltage determined by the ramped voltage and the adjustment voltage; and developing the adjustment voltage across at least one adjustment element external to the controller chip such that the adjustment voltage varies in phase with the ramped voltage and periodically increases at a fixed adjustment rate determined by the at least one adjustment element.

DC-to-DC converter with current mode switching controller that produces ramped voltage with adjustable effective ramp rate

An apparatus and method that enforces current sharing and provides low on times for a multiphase voltage mode regulator has been described. A current level is sensed for each leg of the multiphase regulator. The sensed current level relates to the inductor current level for each of the phases. An average current level is determined from the sensed current levels. A comparison is then made between the sensed current levels and the average current level. In response to the comparison, the current level for the leg is adjusted. According to one embodiment, the on time for the switch of the phase is adjusted. The switch is adjusted to a shorter or longer time when the phase signal level is not equal to the average current level. The apparatus and method work with as few as 2-phases, or as many as N-phases.

Douglas Robert Farrenkopf

Papers

Fabrication of semiconductor structure having two levels of buried regions

Switching controller chip with internal but not external soft start circuitry and DC to DC converter including such a controller chip

Semiconductor structure having two levels of buried regions

DC-to-DC converter with current mode switching controller that produces ramped voltage with adjustable effective ramp rate

Multiphase switching regulator control architecture for low on time systems that enforces current sharing