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E. Campos-González

Researcher at Autonomous University of Queretaro

Publications -  36
Citations -  410

E. Campos-González is an academic researcher from Autonomous University of Queretaro. The author has contributed to research in topics: Thin film & Raman spectroscopy. The author has an hindex of 10, co-authored 33 publications receiving 294 citations. Previous affiliations of E. Campos-González include Instituto Politécnico Nacional & University of Zaragoza.

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The evolution of the Mo5+ oxidation state in the thermochromic effect of MoO3 thin films deposited by rf magnetron sputtering

TL;DR: In this article, the average luminous transmittance T ∗ lum was investigated as a function of the annealing temperature, T a, where the highest change was found in samples treated in argon, where T ∆ lum shifted from 71.69% at room temperature ( RT ) to 44.58% at 300 Â Â C.
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Cell damage produced by magnetic fluid hyperthermia on microglial BV2 cells

TL;DR: The results suggest that there is an additional mechanism of cell damage related to the presence of MNPs at the intracellular space, and that metabolic processes are involved in cell killing.
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Effect of precursor solution and annealing temperature on the physical properties of Sol–Gel-deposited ZnO thin films

TL;DR: In this paper, polycrystalline transparent Zinc oxide thin films have been grown on glass substrates by the sol-gel technique using two different precursor solutions and the physical properties of the films were analyzed with X-ray diffraction, Atomic Force Microscopy, UV-Vis and Raman spectroscopy.
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Development of phase-pure CuSbS2 thin films by annealing thermally evaporated CuS/Sb2S3 stacking layer for solar cell applications

TL;DR: In this article, phase-pure CuSbS2 thin films were fabricated by a two-stage process; 1) the growth of CuS/Sb2S3/glass by stacking layers through a sequential evaporation of Sb 2S3 and CuS powders, 2) the annealing treatment to the stack layer at different temperatures.
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Sulfiding effects on ZnS thin films obtained by evaporation technique

TL;DR: In this article, a graphite box was designed that maintained sulfur in its steam phase while all of the intervals of temperatures were tested, and the results showed that the films annealed in a sulfur atmosphere were close to stoichiometry and that direct band gap varied from 3.68 to 3.84 eV.