. The Orbiting Carbon Observatory-2 (OCO-2) carries and points a three-channel imaging grating spectrometer designed to collect high-resolution, co-boresighted spectra of reflected sunlight within the molecular oxygen (O2) A-band at 0.765 microns and the carbon dioxide (CO2) bands at 1.61 and 2.06 microns. These measurements are calibrated and then combined into soundings that are analyzed to retrieve spatially resolved estimates of the column-averaged CO2 dry-air mole fraction, XCO2. Variations of XCO2 in space and time are then analyzed in the context of the atmospheric transport to quantify surface sources and sinks of CO2. This is a particularly challenging remote-sensing observation because all but the largest emission sources and natural absorbers produce only small ( To meet its demanding measurement requirements, each OCO-2 spectrometer channel collects 24 spectra s−1 across a narrow (  17 000), dynamic range (∼ 104), and sensitivity (continuum signal-to-noise ratio > 400). The OCO-2 instrument performance was extensively characterized and calibrated prior to launch. In general, the instrument has performed as expected during its first 18 months in orbit. However, ongoing calibration and science analysis activities have revealed a number of subtle radiometric and spectroscopic challenges that affect the yield and quality of the OCO-2 data products. These issues include increased numbers of bad pixels, transient artifacts introduced by cosmic rays, radiance discontinuities for spatially non-uniform scenes, a misunderstanding of the instrument polarization orientation, and time-dependent changes in the throughput of the oxygen A-band channel. Here, we describe the OCO-2 instrument, its data products, and its on-orbit performance. We then summarize calibration challenges encountered during its first 18 months in orbit and the methods used to mitigate their impact on the calibrated radiance spectra distributed to the science community.

/pdf/the-on-orbit-performance-of-the-orbiting-carbon-observatory-22fijzo79j.pdf

The on-orbit performance of the Orbiting Carbon Observatory-2 (OCO-2) instrument and its radiometrically calibrated products

Basic mechanisms and ground-test data for radiation effects in solid-state imagers are reviewed, with a special emphasis on proton-induced effects on silicon charge-coupled devices (CCDs). For the proton fluxes encountered in the space environment, both transient ionization and displacement damage effects arise from single-particle interactions. In the former case, individual proton tracks will be seen; in the latter, dark-current spikes (or hot pixels) and trapping states that cause degradation in charge-transfer efficiency will be observed. Proton-induced displacement damage effects on dark current and charge transfer are considered in detail, and the practical implications for shielding, device hardening, and ground testing are discussed.

Proton effects in charge-coupled devices

This document describes the radiation environments, physical mechanisms, and test philosophies that underpin radiation hardness assurance test methodologies. The natural space radiation environment is presented, including the contributions of both trapped and transient particles. The effects of shielding on radiation environments are briefly discussed. Laboratory radiation sources used to simulate radiation environments are covered, including how to choose appropriate sources to mimic environments of interest. The fundamental interactions of radiation with materials via direct and indirect ionization are summarized. Some general test considerations are covered, followed by in-depth discussions of physical mechanisms and issues for total dose and single-event effects testing. The purpose of this document is to describe why the test protocols we use are constructed the way they are. In other words, to answer the question: “Why do we test it that way”?

Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments, Physical Mechanisms, and Foundations for Hardness Assurance

We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 1013 cm−2 of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as ~ 110 ms (the rise time) and ~ 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments.

/pdf/solar-blind-photodetectors-for-harsh-electronics-2ssie2njpk.pdf

Solar-Blind Photodetectors for Harsh Electronics

The effects of heavy ion energy and nuclear interactions on the single-event upset (SEU) and single-event latchup (SEL) response of commercial and radiation-hardened CMOS ICs are explored. Above the threshold LET for direct ionization-induced upsets, little difference is observed in single-event upset and latchup cross sections measured using low versus high energy heavy ions. However, significant differences between low- and high-energy heavy ion test results are observed below the threshold LET for single-node direct ionization-induced upsets. The data suggest that secondary particles produced by nuclear interactions play a role in determining the SEU and SEL hardness of integrated circuits, especially at low LET. The role of nuclear interactions and implications for radiation hardness assurance and rate prediction are discussed.

Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

The Earth's space radiation environment is described in terms of charged particles as relevant to effects on spacecraft electronics. The nature and magnitude of the trapped and transiting environments are described in terms of spatial distribution and temporal variation. The internal radiation environment of the spacecraft is described in terms of shielding the high-energy particles of the free-field environment. Exposure levels are presented in terms of ionizing radiation dose and particle fluence for comparison to electronic component susceptibility. >

E.G. Stassinopoulos

Papers

The space radiation environment for electronics