E
E. H. Hwang
Researcher at Incheon National University
Publications - 25
Citations - 1792
E. H. Hwang is an academic researcher from Incheon National University. The author has contributed to research in topics: Graphene & Bilayer graphene. The author has an hindex of 12, co-authored 24 publications receiving 1718 citations.
Papers
More filters
Journal ArticleDOI
Dielectric function, screening, and plasmons in 2D graphene
E. H. Hwang,S. Das Sarma +1 more
TL;DR: In this article, the wave vector dependent plasmon dispersion and the static screening function of the Coulomb interaction in 2D graphene layer were found in the self-consistent field approximation.
Journal ArticleDOI
Chirality-dependent phonon-limited resistivity in multiple layers of graphene
TL;DR: In this paper, a theory for the temperature and density dependence of phonon-limited resistivity in bilayer and multilayer graphene was developed and compared with the corresponding monolayer result.
Journal ArticleDOI
Metallicity and its low-temperature behavior in dilute two-dimensional carrier systems
S. Das Sarma,E. H. Hwang +1 more
TL;DR: In this paper, the authors theoretically consider the temperature and density dependent transport properties of semiconductor-based 2D carrier systems within the RPA-Boltzmann transport theory, taking into account realistic screened charged impurity scattering in the semiconductor.
Journal ArticleDOI
Optical and transport gaps in gated bilayer graphene
TL;DR: In this article, the authors discuss the effect of disorder on the band gap measured in bilayer graphene in optical and transport experiments and demonstrate that the gap associated with transport experiments is smaller than that associated with optical experiments.
Journal ArticleDOI
Low-density finite-temperature apparent insulating phase in two-dimensional semiconductor systems
S. Das Sarma,E. H. Hwang +1 more
TL;DR: In this article, the observed low-density "insulating" phase of a two-dimensional (2D) semiconductor system, with the carrier density being just below (n n c ) whereas it decreases with increasing T for n n c, is characterized by p(T) with power-law temperature dependence in contrast to the truly insulating state (occurring at still lower densities).