E
E. Martin
Researcher at Autonomous University of Madrid
Publications - 27
Citations - 859
E. Martin is an academic researcher from Autonomous University of Madrid. The author has contributed to research in topics: Excited state & Quantum yield. The author has an hindex of 13, co-authored 27 publications receiving 836 citations.
Papers
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Journal ArticleDOI
Solvent dependence of the inhibition of intramolecular charge-transfer in N-substituted 1,8-naphthalimide derivatives as dye lasers
E. Martin,Rosa Weigand,A. Pardo +2 more
TL;DR: In this article, an intramolecular charge transfer (CT) was used to inhibit the fluorescence and laser emission in the derivatives with an amino terminal group in the side chain, and a high lasing efficiency in the green-blue zone of the spectrum was obtained with a N 2 pulsed laser.
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Hydrogenic impurity levels, dielectric constant, and Coulomb charging effects in silicon crystallites
TL;DR: The notion and usefulness of the effective dielectric constant in silicon nanocrystallites are analyzed using a self-consistent linear screening calculation of hydrogenic impurities and the consequences of charging effects on carrier injection are discussed and shown to be important.
Journal ArticleDOI
Auger and Coulomb charging effects in semiconductor nanocrystallites.
Christophe Delerue,M. Lannoo,G. Allan,E. Martin,I. Mihalcescu,J.C. Vial,R. Romestain,François Muller,A. Bsiesy +8 more
TL;DR: Theoretical and experimental results provided evidence for fast Auger recombination in silicon nanocrystallites as mentioned in this paper, which gave nonradiative lifetimes in the 1 ns range.
Journal ArticleDOI
Saturation and voltage quenching of porous-silicon luminescence and the importance of the Auger effect
I. Mihalcescu,J. C. Vial,A. Bsiesy,F. Muller,R. Romestain,E. Martin,Christophe Delerue,M. Lannoo,G. Allan +8 more
TL;DR: In this paper, two important observations for porous silicon, the saturation and the voltage selective quenching of photoluminescence, are presented and discussed in two phenomenological models: the saturation of the absorption and an Auger effect.
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Theoretical descriptions of porous silicon
TL;DR: In this article, the effect of dangling bonds at the surface and denor (or acceptor) impurities on the radiative lifetime of silicon crystallites is discussed, with particular emphasis on porous silicon.