Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

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Spintronics: Fundamentals and applications

Oscillatory effects in a strong magnetic field B and magnetic susceptibility are investigated, as applied to 2D systems, in which the twofold spin degeneracy is lifted by the spin-orbit-interaction Hamiltonian HSO= alpha ( sigma *k). nu . The term HSO is shown to change greatly the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels, and new oscillations appear due to intersections of levels.

https://iopscience.iop.org/article/10.1088/0022-3719/17/33/015/pdf

Oscillatory effects and the magnetic susceptibility of carriers in inversion layers

The canonical example of a quantum-mechanical two-level system is spin. The simplest picture of spin is a magnetic moment pointing up or down. The full quantum properties of spin become apparent in phenomena such as superpositions of spin states, entanglement among spins, and quantum measurements. Many of these phenomena have been observed in experiments performed on ensembles of particles with spin. Only in recent years have systems been realized in which individual electrons can be trapped and their quantum properties can be studied, thus avoiding unnecessary ensemble averaging. This review describes experiments performed with quantum dots, which are nanometer-scale boxes defined in a semiconductor host material. Quantum dots can hold a precise but tunable number of electron spins starting with 0, 1, 2, etc. Electrical contacts can be made for charge transport measurements and electrostatic gates can be used for controlling the dot potential. This system provides virtually full control over individual electrons. This new, enabling technology is stimulating research on individual spins. This review describes the physics of spins in quantum dots containing one or two electrons, from an experimentalist’s viewpoint. Various methods for extracting spin properties from experiment are presented, restricted exclusively to electrical measurements. Furthermore, experimental techniques are discussed that allow for 1 the rotation of an electron spin into a superposition of up and down, 2 the measurement of the quantum state of an individual spin, and 3 the control of the interaction between two neighboring spins by the Heisenberg exchange interaction. Finally, the physics of the relevant relaxation and dephasing mechanisms is reviewed and experimental results are compared with theories for spin-orbit and hyperfine interactions. All these subjects are directly relevant for the fields of quantum information processing and spintronics with single spins i.e., single spintronics.

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Spins in few-electron quantum dots

In 1984, Bychkov and Rashba introduced a simple form of spin-orbit coupling to explain the peculiarities of electron spin resonance in two-dimensional semiconductors. Over the past 30 years, Rashba spin-orbit coupling has inspired a vast number of predictions, discoveries and innovative concepts far beyond semiconductors. The past decade has been particularly creative, with the realizations of manipulating spin orientation by moving electrons in space, controlling electron trajectories using spin as a steering wheel, and the discovery of new topological classes of materials. This progress has reinvigorated the interest of physicists and materials scientists in the development of inversion asymmetric structures, ranging from layered graphene-like materials to cold atoms. This Review discusses relevant recent and ongoing realizations of Rashba physics in condensed matter.

New perspectives for Rashba spin–orbit coupling

When a neutral atom moves in a properly designed laser field, its center-of-mass motion may mimic the dynamics of a charged particle in a magnetic field, with the emergence of a Lorentz-like force. In this Colloquium the physical principles at the basis of this artificial (synthetic) magnetism are presented. The corresponding Aharonov-Bohm phase is related to the Berry's phase that emerges when the atom adiabatically follows one of the dressed states of the atom-laser interaction. Some manifestations of artificial magnetism for a cold quantum gas, in particular, in terms of vortex nucleation are discussed. The analysis is then generalized to the simulation of non-Abelian gauge potentials and some striking consequences are presented, such as the emergence of an effective spin-orbit coupling. Both the cases of bulk gases and discrete systems, where atoms are trapped in an optical lattice, are addressed.

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Colloquium: Artificial gauge potentials for neutral atoms

Properties of semiconductors with an extremum loop. I. Cyclotron and combinational Resonance in a magnetic field perpendicular to the plane of the loop

E. Rashba

Papers

Properties of semiconductors with an extremum loop. I. Cyclotron and combinational Resonance in a magnetic field perpendicular to the plane of the loop