An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

완효성 비료와 4종복비의 혼용 시용이 팔레놉시스의 생육에 미치는 효과

The following disclosure describes several methods and apparatus for intracranial electrical stimulation to treat or otherwise effectuate a change in neural-functions of a patient. Several embodiments of methods in accordance with the invention are directed toward enhancing or otherwise inducing a lasting change in neural activity to effectuate a particular neural-function. Such lasting change in neural activity is defined as “neuroplasticity.” The methods in accordance with the invention can be used to treat brain damage (e.g., stroke, trauma, etc.), brain disease (e.g., Alzheimer's, Pick's, Parkinson's, etc.), and/or brain disorders (e.g., epilepsy, depression, etc.). The methods in accordance with the invention can also be used to enhance neural-function of normal, healthy brains (e.g., learning, memory, etc.), or to control sensory functions (e.g., pain). Certain embodiments of methods in accordance with the invention electrically stimulate the brain at a stimulation site where neuroplasticity is occurring. The stimulation site may be different than the region in the brain where neural activity is typically present to perform the particular neural function according to the functional organization of the brain. In one embodiment in which neuroplasticity related to the neural-function occurs in the brain, the method can include identifying the location where such neuroplasticity is present. In an alternative embodiment in which neuroplasticity is not occurring in the brain, an alternative aspect is to induce neuroplasticity at a stimulation site where it is expected to occur. Several embodiments of these methods that are expected to produce a lasting effect on the intended neural activity at the stimulation site use electrical pulses that increase the resting membrane potential of neurons at the stimulation site to a subthreshold level.

Methods and apparatus for effectuating a lasting change in a neural-function of a patient

A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device on a first surface of a silicon carbide substrate and with at least one metal contact for the device on the first surface of the substrate. The opposite, second surface of the substrate is then ground and polished until it is substantially transparent. The method then includes masking the polished second surface of the silicon carbide substrate to define a predetermined location for a via that is opposite the device metal contact on the first surface; etching the desired via through the desired masked location until the etch reaches the metal contact on the first surface; and metallizing the via to provide an electrical contact from the second surface of the substrate to the metal contact and to the device on the first surface of the substrate.

Method of forming vias in silicon carbide and resulting devices and circuits

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

This silicon-carbide semiconductor device (101) has a silicon-carbide substrate (10), a main electrode (52), a first barrier layer (70a), and a wiring layer (60). The main electrode (52) is provided directly on top of the silicon-carbide substrate (10). The first barrier layer (70a) is provided on top of the main electrode (52) and is made from a conductive material that does not contain aluminum. The wiring layer (60) is provided on top of the first barrier layer (70a), is isolated from the main electrode (52) by the first barrier layer (70a), and is made from a material that does contain aluminum.

Silicon carbide semiconductor device

A method of manufacturing a silicon carbide semiconductor device having a MOS structure includes preparing a substrate made of silicon carbide, and forming a channel region, a first impurity region, a second impurity region, a gate insulation layer, and a gate electrode to form a semiconductor element on the substrate. In addition, a film is formed on the semiconductor element to provide a material of an interlayer insulation layer, and a reflow process is performed at a temperature about 700° C. or over in an wet atmosphere so that the interlayer insulation layer is formed from the film and an edge portion of the gate electrode is rounded and oxidized.

Method of manufacturing silicon carbide semiconductor device

A SiC semiconductor device includes: a substrate; a drift layer on a first side of the substrate; a trench in the drift layer; a base region contacting a sidewall of the trench; a source region in an upper portion of the base region; a gate electrode in the trench via a gate insulation film; a source electrode on the source region; and a drain electrode on a second side of the substrate. The source region has multi-layered structure including a first layer and a second layer. The first layer as an upper layer contacts the source electrode with ohmic contact. The second layer as a lower layer has an impurity concentration, which is lower than an impurity concentration of the first layer.

Silicon carbide semiconductor device and manufacturing method of the same

A semiconductor device having a JBS diode includes: a SiC substrate; a drift layer on the substrate; an insulation film on the drift layer having an opening in a cell region; a Schottky barrier diode having a Schottky electrode contacting the drift layer through the opening and an ohmic electrode on the substrate; a terminal structure having a RESURF layer in the drift layer surrounding the cell region; and multiple second conductive type layers in the drift layer on an inner side of the RESURF layer contacting the Schottky electrode. The second conductive type layers are separated from each other. The second conductive type layers and the drift layer provide a PN diode. Each second conductive type layer has a depth larger than the RESURF layer.

SiC semiconductor having junction barrier schottky device

A silicon carbide semiconductor device includes a substrate, a drift layer located on a first surface of the substrate, a base region located on the drift layer, a source region located on the base region, a trench sandwiched by each of the base region to the drift layer, a channel layer located in the trench, a gate insulating layer located on the channel layer, a gate electrode located on the gate insulating layer, a source electrode electrically coupled with the source region and the base region, a drain electrode located on a second surface of the substrate, and a deep layer located under the base region and extending to a depth deeper than the trench. The deep layer is formed into a lattice pattern.

Eiichi Okuno

Papers

Silicon carbide semiconductor device

Method of manufacturing silicon carbide semiconductor device

Silicon carbide semiconductor device and manufacturing method of the same

SiC semiconductor having junction barrier schottky device

Silicon carbide semiconductor device including deep layer