Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).

Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species

A showerhead including a body having an opening, a first plate positioned within the opening and having a plurality of slots, a second plate positioned within the opening and having a plurality of slots, and wherein each of the first plate plurality of slots are concentrically aligned with the second plate plurality of slots.

Semiconductor reaction chamber showerhead

A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.

Semiconductor processing reactor and components thereof

A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.

Gas Supply Manifold And Method Of Supplying Gases To Chamber Using Same

There is provided a composition for forming an EUV resist overlayer film that is used in an EUV lithography process, that does not intermix with the EUV resist, that blocks unfavorable exposure light for EUV exposure, for example, UV light and DUV light and selectively transmits EUV light alone, and that can be developed with a developer after exposure A composition for forming an EUV resist overlayer film used in an EUV lithography process including a resin containing a naphthalene ring in a main chain or in a side chain and a solvent, in which the resin may include a hydroxy group, a carboxy group, a sulfo group, or a monovalent organic group having at least one of these groups as a hydrophilic group

Composition for forming resist overlayer film for euv lithography

It is a problem to provide a resist underlayer film forming composition containing a fullerene derivative, which is easily applied on a substrate and from which a resist underlayer film excellent in dry etching properties can be obtained. The problem is solved by for example a resist underlayer film forming composition comprising: a fullerene derivative represented by Formula (3): (where, R 4 represents one group selected from a group consisting of a hydrogen atom, an all group which optionally has a substituent, an aryl group which optionally has a substituent and a heterocyclic group which optionally has a substituent; and R 5 represents an alkyl group which optionally has a substituent or an aryl group which optionally has a substituent); and an organic solvent.

Resist underlayer film forming composition

For below Hp22nm generation, Hard-mask strategy is one of the key issues to achieve the good balance for
Lithography and Etching performance.
The thickness of resist should be thicker enough to obtain the etching margin for the substrate etching. However,
the thickness of photo resist (PR) needs to be thinner to obtain the good pattern collapse margin and resolution. In
order to solve this tread-off, the spin-on hard mask (HM) technology can be applied.
On the other hand, the ultra thin organic Underlayer (UL) being combined with the CVD-HM film stack is also
one of the processes for EUV lithography. In order to avoid the film loss of resist during UL open, the thickness of
UL must be thinner and the etch rate need to be faster. We studied the effect of UL design and thickness for the
EUV lithography performance.
For EUV lithography, the electron generation effect from UL is one of the key factors to improve the patterning
performance of resist. In this paper, we studied the suitable functional group for the Silicon containing HM(Si-HM)
for multilayer process and Org.-UL, which has high potential to generate 2nd electron and enhance the resist
performance, and discuss the material design and performance.

The novel spin-on hard mask and ultrathin UL material for EUVL

PROBLEM TO BE SOLVED: To provide a new composition for forming a resist underlayer film, which can suppress the production of sublimates during film formation (baking) while maintaining various performances required of conventional antireflection films, and to provide a method of forming a photoresist pattern using this composition. SOLUTION: The composition for forming a resist underlayer film for lithography contains a polymer having a structural unit expressed by formula (a), a cross-linking agent, and a solvent. In formula (a), R 1 represents a hydrogen atom or a methyl group, and Q represents -NH- group or -O- group, and L 1 represents a linear or branched alkylene group having 1 to 20 carbon atoms. COPYRIGHT: (C)2011,JPO&INPIT

Composition for forming resist underlayer film and method of forming resist pattern from the same

It is aimed to enhance adhesiveness between a resist pattern formed on a resist underlayer film and to reduce an undercut of the resist pattern. An additive for a resist underlayer film-forming composition, including: a polymer having a structural unit of Formula (1): (where R1 is a hydrogen atom or a methyl group; L is a divalent linking group; X is an acyloxy group having an amino group protected with a tert-butoxycarbonyl group or a nitrogen heterocycle protected with a tert-butoxycarbonyl group).

Endo Takafumi

Papers

Composition for forming resist overlayer film for euv lithography

Resist underlayer film forming composition

The novel spin-on hard mask and ultrathin UL material for EUVL

Composition for forming resist underlayer film and method of forming resist pattern from the same

Additive for resist underlayer film-forming composition and resist underlayer film-forming composition containing the same