The present invention provides a plasma enhancement method and apparatus for electric arc vapor deposition. The plasma enhancement apparatus is positioned to act upon plasma generated from a plasma source before the plasma reaches a substrate to be coated by the plasma. The plasma enhancement apparatus includes a magnet disposed about a magnet axis and defining a first aperture, and a core member disposed about a core member axis and at least partially nested within the first aperture. The core member defines a second aperture, and the plasma enhancement apparatus is arranged and configured in such a manner that the evaporated cathode source material passes from the cathode source and through the second aperture toward the substrate to be coated by the evaporated cathode source material. The plasma is favorably conditioned as it passes through the plasma enhancement apparatus.

Plasma enhancement apparatus and method for physical vapor deposition

Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80; 175)). Preferably: conditions are maintained that produce a substantial ion density and limit the transverse kinetic energy of the ions to less than 0.7 eV; width of the ionization volume adjacent the aperture is limited to width less than about three times the width of the aperture; the aperture is extremely elongated; magnetic fields are avoided or limited; low ion beam noise is maintained; conditions within the ionization chamber are maintained that prevent formation of an arc discharge. With ion beam optics, such as the batch implanter of Figure (20), or in serial implanters, ions from the ion source are transported to a target surface and implanted; advantageously, in some cases, in conjunction with acceleration-deceleration beam lines employing cluster ion beams. Also disclosed are electron gun constructions, ribbon sources for electrons and ionization chamber configurations. Forming features of semiconductor devices, e.g. drain extensions of CMOS devices, and doping of flat panels are shown.

Ion implantation system and control method

An ion implanter apparatus is described with provision for neutralizing the space charge potential of the ionic beam with a closed loop feedback system responding to the electrical charges that tend to accumulate on a target specimen. Neutralization is provided by a controllable electron source surrounding the beam. Flow of electrons to a plate radially outward of the electron source is used to derive a signal proportional to the beam ion current when the space charge potential of the beam is neutralized. The beam current signal can be used (1) to provide a read-out display for the operator; (2) to control the magnitude of the ion beam; (3) to be integrated to determine the total positive charge that enters the Faraday cage of the implanter for use to control the ion beam shutter; or (4) to effect relative movement of the specimen and the beam.

Apparatus and method for neutralizing the beam in an ion implanter

A method of manufacturing a semiconductor device includes the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate In general, dopant molecules contain n dopant atoms, where n is an integer number greater than 10 This method enables increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1/n times the cluster implantation energy, while reducing the charge per dopant atom by the factor n

Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions

Method and apparatus for use of emitting, ionizing, accelerating and collecting elements in a high vacuum to implant a hard film on a plastic substrate or the like. In preparation, a slug of a selected material to be deposited as a film is placed in the emitter. The specimens or articles to be implanted are placed on supports in the vicinity of the collector. A cover enclosure is then placed in position and the region enclosed by the cover is exhausted to a high vacuum. Selected potentials are applied to various elements of the apparatus and an accelerating/directing field, which may be developed electrostatically, magnetically or by a combination of both, is developed in the acceleration structure. The electrostatic field causes electron emission from the ionizing elements to develop an increased charge on the emitted ionized particles. When implantation is to begin, a shutter control is moved out of beam blocking position and ionized particles from the emitter pick up additional charge from the ionizing elements and are accelerated to high velocity for bombarding the specimens. The collector is provided near the end of the enclosure beyond the specimen support region. The specimens are discharged regularly to eliminate the build-up of surface charge from the stream of bombarding ions.

Method for depositing film on a substrate

Combined low energy, high density ion implantation and kinetic transport deposition of refractory or other materials is carried out under very high vacuum conditions. The process facilitates formation of large area, highly doped, shallow semiconductor junctions and the associated electrodes. The steps of preimplantation cleaning, ion implantation for junction formation, ohmic contact formation by kinetic transport deposition, and postimplantation anneal all are carried out in the same chamber. Under high vacuum, pre-implantation cleaning and annealing of semi-conductor substrates is accomplished by electron bombardment and concomitant heating from an annular flood filament. Next a conical electron beam vaporizes solid source material within the evacuated chamber, ionizing some of the vaporized particles. The result is a plasma expansion source including ions which are accelerated electrostatically for implantation in the target, and atoms which are kinetically transported toward the target to form an ohmic contact or other metalization layer. Additional build-up of kinetically transported material occurs after ion implantation is complete. Post-implantation annealing is carried out using electron bombardment to heat the targets to above an annealing threshhold for a period of time short enough so that no undesirable diffusion occurs. The substrates then are rapidly forced cooled. Repeating the process using another source permits different refractory materials to be layered. The combined kinetic transport deposition and ionimplantation into the underlying stratum effectively bonds the second material to the previously deposited layer.

Ennis Jun Robert M

Papers

Combined ion implantation and kinetic transport deposition process

Verfahren zur ionenimplantierung