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Francois Morin

Researcher at University of Angers

Publications -  33
Citations -  212

Francois Morin is an academic researcher from University of Angers. The author has contributed to research in topics: Medicine & Capacitor. The author has an hindex of 7, co-authored 29 publications receiving 154 citations. Previous affiliations of Francois Morin include Orange S.A. & Centre national d'études des télécommunications.

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Patent

Method for manufacturing an active matrix display screen with storage capacitors

TL;DR: In this article, a two masking levels are used for display on flat liquid crystal screens: the first masking level is dedicated or merged with the addressing lines, and during the second masking, capacitative lines are defined which overlap the pixels so as to form the storage capacitors (Cs).
Patent

Method of making a display comprising thin-film transistors and capacitors

TL;DR: In this paper, a procedure for fabrication of circuits electroniques based on thin film transistors and capacitors is described, which includes the following operations: deposition on an insulating substrate (100) with a layer (102) of a first transparent conductive material; premiere photogravure appliqué appliquee a cette premiere couche pour constituer des paves (106) formant une des armatures des futurs condensateurs, ainsi que des sources and drains for les futurs transistors; first photoengraving applied to this
Patent

Active matrix display screen with storage capacitors formed of conductive blocks, semiconductive material, nonconductive material, and capacitive lines

TL;DR: In this paper, a liquid crystal display screen including a substrate with conductive addressing columns and conductive blocks, each including a block lengthening piece, a layer of semiconductive material followed by a nonconductive material formed on the addressing columns.
Patent

Process for fabricating electronic circuits based on thin-film transistors and capacitors

TL;DR: In this paper, the second photo-etching segments (S) forming conductive bridges (120, 110, 112, 114) over breaks (103) in the conductive layer (102) forming the columns.