An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Methods and apparatus for computer-based control of light sources in a networked lighting system. In one example, a plurality of LED-based lighting systems are arranged as computer controllable “light strings.” Applications contemplated for such light strings include, but are not limited to, decorative and entertainment-oriented lighting applications (e.g., Christmas tree lights, display lights, theme park lighting, video and other game arcade lighting, etc.). Via computer control, one or more such light strings may provide a variety of complex temporal and color-changing lighting effects. In one example, lighting data is communicated in a given light string in a serial manner, according to a variety of different data transmission and processing schemes. In another example, individual lighting systems of a light string are coupled together via a variety of different conduit configurations to provide for easy coupling and arrangement of multiple light sources constituting the light string. In yet another example, small LED-based lighting systems capable of being arranged in a light string configuration are manufactured as integrated circuits including data processing circuitry and control circuitry for LED light sources, and are packaged along with LEDs for convenient coupling to a conduit to connect multiple lighting systems.

Methods and apparatus for controlling devices in a networked lighting system

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organized in sectors with each sector being formed of a single column or a group of columns having their control gates connected in common. In one embodiment, a high speed shift register is used in place of a row decoder to serially shift in data for the word lines, with all data for each word line of a sector being contained in the shift register on completion of its serial loading. In one embodiment, speed is improved by utilizing a parallel loaded buffer register which receives parallel data from the high speed shift register and holds that data during the write operation, allowing the shift register to receive serial loaded data during the write operation for use in a subsequent write operation. In one embodiment, a verification is performed in parallel on all to-be-programmed cells in a column and the bit line current monitored. If all of the to-be-programmed cells have been properly programmed, the bit line current will be substantially zero. If bit line current is detected, another write operation is performed on all cells of the sector, and another verify operation is performed. This write/verify procedure is repeated until verification is successful, as detected or substantially zero, bit line current.

Eeprom with split gate source side injection

A high k dielectric film and methods for forming the same are disclosed. The high k material includes two peaks of impurity concentration, particularly nitrogen, such as at a lower interface and upper interface, making the layer particularly suitable for transistor gate dielectric applications. The methods of formation include low temperature processes, particularly CVD using a remote plasma generator and atomic layer deposition using selective incorporation of nitrogen in the cyclic process. Advantageously, nitrogen levels are tailored during the deposition process and temperatures are low enough to avoid interdiffusion and allow maintenance of the desired impurity profile.

Incorporation of nitrogen into high k dielectric film

An electro-optical device having a plurality of pixels including a plurality of EL elements, wherein the electro-optical device provides a gray scale display by controlling a period of time at which the plurality of the EL elements emit light in one frame period; the plurality of the EL elements have a first electrode and a second electrode; the first electrode is held at a constant potential; and a potential of the second electrode changes in such a manner that a polarity of an EL driving voltage, which is a difference between the potentials applied to the first and second electrodes, is inverted for each one frame period.

Electro-optical device

A method is provided for forming isolated regions of oxide of an integrated circuit, and an integrated circuit formed according to the same. A pad oxide layer is formed over a portion of a substrate. A first silicon nitride layer is formed over the pad oxide layer. A polysilicon buffer layer is then formed over the first silicon nitride layer. A second silicon nitride layer is formed over the polysilicon layer. A photoresist layer is formed and patterned over the second silicon nitride layer. An opening is etched through the second silicon nitride layer and the polysilicon buffer layer to expose a portion of the first silicon nitride layer. A third silicon nitride region is then formed on at least the polysilicon buffer layer exposed in the opening. The first silicon nitride layer is etched in the opening. A field oxide region is then formed in the opening.

Method of forming isolated regions of oxide

A method of forming an insulated-gate field-effect transistor, and the transistor formed thereby, is described. According to a first embodiment, an Inverted-T gate structure is formed by the deposition of a polycrystalline silicon layer, followed by the deposition of a metal silicide layer thereover. The metal silicide layer is etched with etchant which does not significantly etch polysilicon, to define the upper portion of the gate electrode. The reachthrough lightly-doped source/drain extensions are then implanted through the polysilicon layer, using the upper gate electrode portion as a mask. Sidewall spacers are formed on the sides of the upper portion of the gate electrode, and the polysilicon etched using the spacers as a mask, to define the inverted-T gate structure. In addition, either with the inverted-T gate structure or in conjunction with conventional gate structures, a method is disclosed which uses a first sidewall film to define the location of the source/drain implant relative to the LDD regions, and a second sidewall spacer to space direct react silicide formation from the gate, so that the dimensions of the graded junction may be defined independently from that of the silicidation reaction.

An integrated gate field-effect transistor with gate-drain overlap and method of making the same

A capacitor is formed for use with a DRAM storage cell by lying down alternating layers of polycrystalline silicon for the storage node and the ground plate. A buried bit line allows the capacitor area to cover a significant fraction of the cell layout area. The alternating storage node and ground plates of the capacitor are laid down alternately, and connected together as they are formed. The number of interleaved layers which can be used to form the capacitor can easily be varied to suit process requirements.

Method of making a stacked capacitor DRAM cell

The thin film transistor formed of polycrystalline silicon is positioned adjacent a heat reaction chamber. The gate electrode for the transistor is formed within a silicon substrate and a gate dielectric is positioned over the gate electrode. A pass transistor is coupled to the gate electrode, the pass transistor having a source/drain region in the same semiconductor substrate and positioned adjacent to the gate electrode of the thin film heating transistor. When the pass transistor is enabled, a voltage is applied to the gate electrode which causes the current to flow from the drain to the source of the thin film transistor. The current flow passes through a highly resistive region which generates heat that is transmitted to the heat reaction chamber.

Thin-film transistor used as heating element for microreaction chamber

A structure and method for creating an integrated circuit passivation (24) comprising, a circuit (16), a dielectric (18), and metal plates (20) over which an insulating layer (26) is disposed that electrically and hermetically isolates the circuit (16), and a discharge layer (32) that is deposited to form a passivation (24) that protects the circuit (16) from electrostatic discharges caused by, e.g., a finger, is disclosed.

Frank Randolph Bryant

Papers

Method of forming isolated regions of oxide

An integrated gate field-effect transistor with gate-drain overlap and method of making the same

Method of making a stacked capacitor DRAM cell

Thin-film transistor used as heating element for microreaction chamber

Electrostatic discharge protection for integrated circuit sensor passivation