By virtue of their wide applications in personal electronic devices and industrial monitoring, pressure sensors are attractive candidates for promoting the advancement of science and technology in modern society. Flexible pressure sensors based on organic materials, which combine unique advantages of flexibility and low-cost, have emerged as a highly active field due to their promising applications in artificial intelligence systems and wearable health care devices. In this review, we focus on the fundamentals of flexible pressure sensors, and subsequently on several critical concepts for the exploration of functional materials and optimization of sensing devices toward practical applications. Perspectives on self-powered, transparent and implantable pressure sensing devices are also examined to highlight the development directions in this exciting research field.

Advances of flexible pressure sensors toward artificial intelligence and health care applications

Electrical properties of nominally undoped β-Ga2O3 crystals grown by the Czochralski method from an iridium crucible under a carbon dioxide containing atmosphere were studied by temperature dependent conductivity and Hall effect measurements as well as deep level transient spectroscopy. All crystals were n-type with net donor concentrations between 6 × 1016 and 8 × 1017 cm−3. The Hall mobility of electrons was on average 130 cm2/Vs at room temperature and attained a maximum of 500 cm2/Vs at 100 K. The donor ionization energy was dependent on the donor concentration. Extrapolation of this dependence to zero concentration yielded a value of about 36 meV for isolated donors agreeing well with the ionization energy derived from effective-mass theory. Three deep electron traps were found at 0.55, 0.74, and 1.04 eV below the conduction bandedge. The trap at EC – 0.74 eV was detected in all samples with concentrations of 2 – 4 × 1016 cm−3. This concentration is comparable to that of compensating acceptors we hav...

Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

We investigate the behavior of holes in the valence band of a range of wide-band-gap oxides including ZnO, MgO, In${}_{2}$O${}_{3}$, Ga${}_{2}$O${}_{3}$, Al${}_{2}$O${}_{3}$, SnO${}_{2}$, SiO${}_{2}$, and TiO${}_{2}$. Based on hybrid functional calculations, we find that, due to the orbital composition of the valence band, holes tend to form localized small polarons with characteristic lattice distortions, even in the absence of defects or impurities. These self-trapped holes (STHs) are energetically more favorable than delocalized, free holes in the valence band in all materials but ZnO and SiO${}_{2}$. Based on calculated optical absorption and emission energies we show that STHs provide an explanation for the luminescence peaks that have been observed in many of these oxides. We demonstrate that polaron formation prohibits $p$-type conductivity in this class of materials.

Role of self-trapping in luminescence and p -type conductivity of wide-band-gap oxides

Oxide electronic materials provide a plethora of possible applications and offer ample opportunity for scientists to probe into some of the exciting and intriguing phenomena exhibited by oxide systems and oxide interfaces. In addition to the already diverse spectrum of properties, the nanoscale form of oxides provides a new dimension of hitherto unknown phenomena due to the increased surface-to-volume ratio.

Oxide electronic materials are becoming increasingly important in a wide range of applications including transparent electronics, optoelectronics, magnetoelectronics, photonics, spintronics, thermoelectrics, piezoelectrics, power harvesting, hydrogen storage and environmental waste management. Synthesis and fabrication of these materials, as well as processing into particular device structures to suit a specific application is still a challenge. Further, characterization of these materials to understand the tunability of their properties and the novel properties that evolve due to their nanostructured nature is another facet of the challenge. The research related to the oxide electronic field is at an impressionable stage, and this has motivated us to contribute with a roadmap on 'oxide electronic materials and oxide interfaces'.

This roadmap envisages the potential applications of oxide materials in cutting edge technologies and focuses on the necessary advances required to implement these materials, including both conventional and novel techniques for the synthesis, characterization, processing and fabrication of nanostructured oxides and oxide-based devices. The contents of this roadmap will highlight the functional and correlated properties of oxides in bulk, nano, thin film, multilayer and heterostructure forms, as well as the theoretical considerations behind both present and future applications in many technologically important areas as pointed out by Venkatesan.

The contributions in this roadmap span several thematic groups which are represented by the following authors: novel field effect transistors and bipolar devices by Fortunato, Grundmann, Boschker, Rao, and Rogers; energy conversion and saving by Zaban, Weidenkaff, and Murakami; new opportunities of photonics by Fompeyrine, and Zuniga-Perez; multiferroic materials including novel phenomena by Ramesh, Spaldin, Mertig, Lorenz, Srinivasan, and Prellier; and concepts for topological oxide electronics by Kawasaki, Pentcheva, and Gegenwart. Finally, Miletto Granozio presents the European action 'towards oxide-based electronics' which develops an oxide electronics roadmap with emphasis on future nonvolatile memories and the required technologies.

In summary, we do hope that this oxide roadmap appears as an interesting up-to-date snapshot on one of the most exciting and active areas of solid state physics, materials science, and chemistry, which even after many years of very successful development shows in short intervals novel insights and achievements.

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The 2016 oxide electronic materials and oxide interfaces roadmap

The Schottky barrier height of Au deposited on (100) surfaces of n-type β-Ga2O3 single crystals was determined by current-voltage characteristics and high-resolution photoemission spectroscopy resulting in a common effective value of 1.04 ± 0.08 eV. Furthermore, the electron affinity of β-Ga2O3 and the work function of Au were determined to be 4.00 ± 0.05 eV and 5.23 ± 0.05 eV, respectively, yielding a barrier height of 1.23 eV according to the Schottky-Mott rule. The reduction of the Schottky-Mott barrier to the effective value was ascribed to the image-force effect and the action of metal-induced gap states, whereas extrinsic influences could be avoided.

Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3

Metal-semiconductor field-effect transistors (MESFETs) are widely known from opaque high-speed GaAs or high-power SiC and GaN technology. For the emerging field of transparent electronics, only metal-insulator-semiconductor field-effect transistors (MISFETs) were considered so far. This article reviews the progress of high-performance MESFETs in oxide electronics and reflects the recent advances of this technique towards transparent MESFET circuitry. We discuss design prospects as well as limitations regarding device performance, reliability and stability. The presented ZnO-based MESFETs and inverters have superior properties compared to MISFETs, i.e., high channel mobilities and on/off-ratios, high gain, and low uncertainty level at comparatively low operating voltages. This makes them a promising approach for future low-cost transparent electronics.

Recent progress on ZnO-based metal-semiconductor field-effect transistors and their application in transparent integrated circuits.

Transparent conductive oxides (TCOs) are a well-known material class allowing Ohmic conduction. A large free carrier concentration in the 10 21 cm -3 range and high conductivity (beyond 10 4 S/cm) is feasible simultaneously with high transparency. Applications are manifold and include touch screens and front contacts for displays or solar cells. Transparent semiconducting oxides (TSO) are oxides with an intermediate free carrier concentration (typically 10 14 -10 18 cm -3 ) allowing the formation of depletion layers. We review recent results on TSO-based transistors and inverters. Most work has been reported on MISFETs. We show that MESFETs exhibit high performance and low voltage operation of oxide electronics. MESFET-based inverters offer superior performance compared to results reported for TSO MISFET-based circuits. Optical image of inverter based on thin film MESFETs with Mg 0.003 Zn 0.997 O channels (left) and experimental inverter characteristic for supply voltage of V DD = +2.0 V (right).

Transparent semiconducting oxides: materials and devices

MESFET Electronics: Recent Progress on ZnO‐Based Metal‐Semiconductor Field‐Effect Transistors and Their Application in Transparent Integrated Circuits (Adv. Mater. 47/2010)

Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits

Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits (vol 22, pg 5332, 2010)

Friedrich Schein

Papers

Recent progress on ZnO-based metal-semiconductor field-effect transistors and their application in transparent integrated circuits.

Transparent semiconducting oxides: materials and devices

MESFET Electronics: Recent Progress on ZnO‐Based Metal‐Semiconductor Field‐Effect Transistors and Their Application in Transparent Integrated Circuits (Adv. Mater. 47/2010)

Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits

Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits (vol 22, pg 5332, 2010)