Disclosed is a hybrid integrated circuit device provided with an active filter. The active filter is constructed mainly from a rectifier circuit, a reactor with one terminal connected with an output terminal of the rectifier, a switching element connected with one terminal of the reactor and a smoothing condenser connected with the other terminal of the reactor. The active filter is mounted on an insulating metal substrate and has, other than the above feature, a specific circuit structure wherein the substrate is divided by a ground pattern or power supply pattern into two blocks. One block is for a large current circuit such as the rectifier circuit, the switching element, and a diode and another block for a small signal circuit such as a control circuit. The hybrid integrated circuit device is of remarkably compact size. Also, it is greatly superior in a noise performance because switching noise does not flow into the chassis of electronic equipment from the metal substrate and the control circuit is shielded from the noise produced by the large current circuit, and also because the noise caused by wiring inductance can be limited.

Hybrid integrated circuit device

In an EL display device in which color purity of each of red, blue and green is different, the EL display device displaying an image of a desired balance of red, blue and green is provided. A video signal supplied to each EL element is gamma (γ)-corrected by a correction circuit, the color purity of each of blue luminescence, green luminescence, and red luminescence is suitably controlled in accordance with the voltage and current of the corrected video signal.

EL display device and electronic device

To provide a highly reliable semiconductor device which does not suffer from a crack in its package, a semiconductor chip 12 is mounted on a lead frame 11 with a bonding layer 13 between them, and they are sealed with a sealing resin 14. The lead frame 11 has a base member 11a essentially consisting of Cu and an oxide film 11b essentially consisting of an oxide of the base member 11a formed on the base member and having a thickness of about 50 nm or below. By controlling the oxide film 11b to a thickness of about 50 nm or below, an adhesion strength with the sealing resin 14 is improved greatly, so that a package crack does not occur even if a large thermal load is applied in a reflow process for mounting.

Semiconductor device, and manufacturing method of the same

A production/purchase management processing system includes a master production schedule (2) which describes a production planning of each of a plurality of kinds of products independently for each period, a product construction/item master (3) which describes information related to parts which form the product for each of the products, a stock/remaining order information source (4) which describes stock quantity and remaining orders for items, where the items respectively represent the product or the part, a production planning processor (1) for reading the contents of the master production schedule, the product construction/item master and the stock/remaining order information source, and for outputting a purchase planning order (5) and a production planning order (6) which are generated based on the read contents, where the purchase planning order satisfies a required number of an arbitrary item by purchase and the production planning order satisfies a required number of an arbitrary item by production, and a with-strings reorganization processor (7) for outputting a with-strings production planning order (8) for each of the products having as its constituent element an item for which the production planning order is output from the production planning processor. The with-strings production planning order is output for at least one item which is included in the production planning order based on processes carried out in the production planning processor and the with-strings reorganization processor.

Production/purchase management processing system and method

A semiconductor device is provided wherein conductive paths 40, formed of crystal that grows better along the X-Y axis than along the Z axis, are embedded in an insulating resin 44, and the back surface of the conductive path 40 is exposed through the insulating resin 44 and sealed. With this arrangement, fractures of the conductive paths 40 embedded in the insulating resin 44 are suppressed.

Semiconductor device and semiconductor module

PURPOSE:To miniaturize a polycrystalline silicon film and to easily obtain insulation at the time of high temperature by selectively implanting predetermined ions of oxygen or the like to the polycrystalline silicon film to enhance the resistance of a nondiffused section. CONSTITUTION:An insulating substrate 10 is made of a single-crystal silicon substrate having a thermal silicon oxide film 112 having approx. 0.5mum of thickness on one main surface. A recess 116 is formed on one main surface of its opposite side, and its thinned section forms a diaphragm 117. Regions 12, 13, 14 are formed on a polycrystalline silicon film 11. The polycrystalline silicon piezoresistance element region 12 and the polycrystalline silicon output wiring region 13 are of dopant-diffused P and P type regions having approx. 0.5mum of thickness, and formed at predetermined positions on the film 112. The high resistance region 14 is of a nondoped nondiffused section. This region 14 is formed with a mask for selectively implanting oxygen ions on the film 11, and formed by removing the mask after the ions are implanted.

Semiconductor device and manufacture thereof

PURPOSE:To enable formation of a protective film having a comparatively thin film thickness on a crystal silicon layer acting as a strain gauge without generating a stepped cut by a method wherein the crystal silicon layer is heat- treated, and the protective film is formed on the surface of the crystal silicon layer thereof CONSTITUTION:A strain gauge 3 consisting of polycrystalline silicon is formed according to the CVD method or the evaporation method on a silicon oxide film 2 at the part corresponding to the upper part of a diaphragm part 1a formed on the other main surface side of a single crystal silicon substrate 1 The strain gauge 3 is formed in an island type being etched into the desired shape according to the photolithography method, etc Thermal oxidation is performed for 30-60min at the temperature of 800-1000 degC, for example, in an oxidizing atmosphere in this condition to form a protective film 5 consisting of a silicon oxide film on the surface of the strain gauge 3 Because the protective film 5 is formed according to a chemical reaction such as oxidation like this, film thickness thereof is formed to the equal thickness at the upper surface and the side surface of the strain gauge 3, accordingly trouble such as the stepped cut of the film is not generated

Manufacture of semiconductor strain detector

PURPOSE:To obtain an analog signal easily in response to pressure, and to improve the productivity of a measuring apparatus for superhigh pressure by using a bulky semiconductor as a pressure sensor for a pressure measuring apparatus CONSTITUTION:The wall body of a sealed vessel 1 for a pressure measuring apparatus is partly deformed, and external pressure is transmitted over the inside by silicone oil 5 as a pressure transfer fluid A bulky semiconductor 6 with a pair of electrodes is arranged into oil 5 sealed into the vessel 1, the semiconductor 6 is supported in oil 5 by wiring wires 7, and both tips of the wires 7 are connected to a hybrid circuit substrate 10 through conductive lead pins 8 and contact pieces 9 The vessel 1 is constituted of a hard vessel section 2 and a seal diaphragm 3, and either of germanium or silicon is used as the semiconductor 6 The bulky semiconductor is employed as a pressure sensor, thus easily outputting an analog signal corresponding to pressure, then improving the productivity of the superhigh pressure measuring apparatus

Fukazawa Takeshi

Papers

Semiconductor device and manufacture thereof

Manufacture of semiconductor strain detector

Pressure measuring apparatus