F
Fusen Chen
Researcher at Applied Materials
Publications - 32
Citations - 986
Fusen Chen is an academic researcher from Applied Materials. The author has contributed to research in topics: Layer (electronics) & Sputtering. The author has an hindex of 17, co-authored 32 publications receiving 986 citations.
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Patent
Inductive plasma loop enhancing magnetron sputtering
TL;DR: In this article, a DC magnetron sputter reactor is used to produce an RF magnetic field around the toroidal circumference of the tube such that an electric field is induced along the tube axis.
Patent
Methods and apparatus for forming barrier layers in high aspect ratio vias
TL;DR: In this article, a method for forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an ALD chamber is described, followed by removing at least a portion of the barrier layer from the bottom of the via by sputter etching.
Patent
Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer
TL;DR: An aluminum sputtering process is particularly useful for filling vias and contacts of high aspect ratios formed through a dielectric layer and also for forming interconnects that are highly resistant to electromigration as mentioned in this paper.
Patent
Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement
Peijun Ding,Fuhong Zhang,Hsien-Lung Yang,Michael Miller,Jianming Fu,Jick M. Yu,Zheng Xu,Fusen Chen +7 more
TL;DR: In this article, an integrated sputtering method and reactor for copper or aluminum seed layers was proposed, in which a plasma sputter reactor initially deposits a thin conformal layer onto a substrate including a high-aspect ratio hole subject to the formation of overhangs.
Patent
Method and associated apparatus to mechanically enhance the deposition of a metal film within a feature
TL;DR: In this paper, a method and associated apparatus of electroplating an object and filling small features is described, which comprises immersing the plating surface into an electrolyte solution and mechanically enhancing the concentration of metal ions in the electrolyte solutions in the features.