We describe the output performance of the 1415 nm emission in Nd:YAG in a plane-concave cavity under traditional pumping into the F5/24 level (808 nm) and direct in-band pumping into the F3/24 level (885 nm). An end-pumped Nd:YAG laser yielded maximum cw output power of 6.3 W and 4.2 W at 885 nm and 808 nm laser diode (LD) pumping, respectively. To the best of our knowledge, this is the highest output power of a LD-pumped 1415 nm laser.

Diode-pumped continuous-wave eye-safe Nd:YAG laser at 1415 nm

The generation of high pulse and average power radiation in eye-safe spectral region by the third stokes generation in barium nitrate Raman laser

The continuous-wave (CW) laser properties of an efficient diode-pumped Nd:YAP crystal operating at 1.43 μm formed with a simple plane-concave cavity have been studied. With the incident pump power of 17.8 W, an output power of 2.2 W was obtained, giving an optical conversion efficiency of 12.4% and a slope efficiency of 14.7%. The beam quality factor M2 was less than 1.2. The power stability was less 2.4% in 60 minutes.

Diode-pumped continuous-wave eye-safe Nd:YAP laser at 1.43 μm

Investigations on optimization of methods of laser cleaning of metal artworks by pulses of microsecond and nanosecond duration on wavelengths of 1064 nm and 1320 nm of Nd:YAG-Lasers were fulfilled. Comparison of results of cleaning under different conditions was done.

1320 nm Range Nd:YAG-Laser in Restoration of Artworks Made of Bronze and Other Metals

Numerical computer simulation of laser pulse heating processes of multilayered structures of SOI type, dielectric or metal film on substrates, is performed. The corresponding heat-diffusion equation is solved by taking into account current phase transitions and interferences of heating radiation which is reflected from layers and phase boundaries. The periodical change of reflectivity versus the thickness of one or several layers and the effect of radiation absorption and heating are shown. The results of computer modelling are compared with experimental data at pulse heating of multilayer structures.



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Interference effects at laser pulse heating of multilayer structures

A powerful, repetitively pulsed 1444-nm Nd:YAG laser is studied. It is shown that the efficiency of this laser is mainly limited by the absorption at 1444 nm in the active element, the UV radiation of the pump lamps, the lasing at the internal mode frequencies of the active elements, and the amplified luminescence at 1444 nm. An optimisation procedure resulted in the creation of a powerful laser producing 1.4-J pulses at a repetition rate of between 1 and 10 Hz at 1444 nm.

https://iopscience.iop.org/article/10.1070/QE2000v030n08ABEH001789/pdf

A powerful, repetitively pulsed 1444-nm Nd:YAG laser

We have studied stimulated Raman (SRS) conversion to the first Stokes component of multimode (M2 = 8) radiation from a YAG:Nd laser with lasing wavelengths of 1319 µm, 1338 µm, and 1357 µm in a barium nitrate crystal We have obtained pulses of converted radiation with energies up to 120 mJ We have achieved conversion efficiencies greater than 40% for each of the three Raman laser wavelengths of 1530 µm, 1556 µm, and 1582 µm with divergence of the beams of converted radiation close to the diffraction-limited value (M2 < 15)

Stimulated Raman conversion of radiation from a YAG:Nd laser with wavelengths of 1.319, 1.338, and 1.357 µm in a barium nitrate crystal

P-Si layers on c-Si substrate with a thermo-insulating coating (TIC) were irradiated by the 50-ns second harmonic of an Nd-glass laser. Time-resolved measurements, optical microscopy (OM) and scanning electron microscopy (SEM) data for samples with a 0.1–0.9 μm p-Si layer and a 0.1 μm SiO2 or 0.16 μm Si3N4 TIC layer show that if the p-Si layers melt throughout the depth the solidification starts from the surface as well as from the rear. The latent heat released upon coarse grain growth from the rear prevents further crystallization near the top surface and results in partial or complete remelting of the solid phase on the surface.

Crystallization features of silicon layers on thermo-insulated substrates under nanosecond laser radiation

This paper examines the basic questions which must be taken into account in the development of powerful dye lasers, pumped by nanosecond pulses, suitable for use in wide-range laser systems with highly efficient nonlinear frequency converter for the example of the development of a dye laser pumped by a single-pulse ruby laser. The optical layout of the dye laser pumped by a single-pulse ruby laser is shown. It is shown that the energy efficiency of the operation of dye amplifiers depends substantially both on the power density of the amplified signal and on the power density of the radiation. The use of a radiation frequency converter based on stimulated Raman scattering in compressed hydrogen at the output of the laser system developed enabled covering the spectral range 1.1-8.11 mm with powerful laser radiation.

Basic problems in the development of powerful wide-range laser systems based on solutions of dyes

The study was conducted on silicon wafers having hole-type conductivity implanted by antimony ions (Sb/sup +/) with 60 keV energy and annealed by pulsed laser radiation. After laser processing, part of the wafer was annealed in a diffusion oven at temperatures in the range of 600-1220/sup 0/C for 5-30 min in an atmosphere of nitrogen or oxygen. The thermal stability of the impurity was regulated by varying the surface impedance before and after thermal processing. On a portion of the samples the depth of the position of the p-n junction was measured by the method of dying a diagonal thin section. The concentration of structural defects in the surface was determined by the method of etching in a structurally sensitive Sirtl solution. The profiles of the impurity distribution along the depth of the sample were plotted by using neutron activation analysis. The profiles of the electrically active impurity distribution were plotted by measuring the conductivity by layers.

G. A. Tatur

Papers

A powerful, repetitively pulsed 1444-nm Nd:YAG laser

Stimulated Raman conversion of radiation from a YAG:Nd laser with wavelengths of 1.319, 1.338, and 1.357 µm in a barium nitrate crystal

Crystallization features of silicon layers on thermo-insulated substrates under nanosecond laser radiation

Basic problems in the development of powerful wide-range laser systems based on solutions of dyes

Investigation of the thermal stability of ion-implanted and laser annealed silicon layers