Handbook of SiC properties for fuel performance modeling

A review on silicene - New candidate for electronics

Thermoelectric power sources have consistently demonstrated their extraordinary reliability and longevity for deep space missions and small unattended terrestrial systems. However, more efficient bulk materials and practical devices are required to improve existing technology and expand into large-scale waste heat recovery applications. Research has long focused on complex compounds that best combine the electrical properties of degenerate semiconductors with the low thermal conductivity of glassy materials. Recently it has been found that nanostructuring is an effective method to decouple electrical and thermal transport parameters. Dramatic reductions in the lattice thermal conductivity are achieved by nanostructuring bulk silicon with limited degradation in its electron mobility, leading to an unprecedented increase by a factor of 3.5 in its performance over that of the parent single-crystal material. This makes nanostructured bulk (nano-bulk) Si an effective high temperature thermoelectric material that performs at about 70% the level of state-of-the-art Si0.8Ge0.2 but without the need for expensive and rare Ge.

Nanostructured Bulk Silicon as an Effective Thermoelectric Material

A classification scheme for the different forms of implant-related damage which arise upon annealing consisting of five categories is presented. Category I damage is “subthreshold” damage or that which results prior to the formation of an amorphous layer. If the dose is increased sufficiently to result in the formation of an amorphous layer then the defects which form beyond the amorphous/crystalline (a/c) interface are classified as category II (“end of range”) damage. Category III defects are associated with the solid phase epitaxial growth of the amorphous layer. The most common forms of this damage are microtwins, hairpin dislocations and segregation related defects. It is possible to produce a buried amorphous layer upon implantation, If this occurs, then the defects which form when the two a/c interfaces meet are termed category IV (“clamshell”, “zipper”) defects. Finally, category V defects arise from exceeding the solid solubility of the implanted species in the substrate at the annealing temperature. These defects are most often precipitates or dislocation loops.

A systematic analysis of defects in ion-implanted silicon

The interaction of Cu with Si separated by thin (50 nm) layers of tantalum, Ta2N, and a nitrogen alloy of Ta has been investigated to determine the factors that affect the success of these materials as diffusion barriers to copper. Intermixing in these films was followed as a function of annealing temperature by in situ resistance measurements, Rutherford backscattering spectra, scanning electron microscopy, and cross‐section transmission electron microscopy. Ta prevents Cu‐silicon interaction up to 550 °C for 30 min in flowing purified He. At higher temperatures, copper penetration results in the formation of η‘‐Cu3Si precipitates at the Ta‐Si interface. Local defect sites appear on the surface of the sample in the early stages of this reaction. The Ta subsequently reacts with the substrate at 650 °C to form a planar hexagonal‐TaSi2 layer. Ta silicide formation, which does not occur until 700 °C in a Ta‐Si binary reaction couple, is accelerated by the presence of Cu. Nitrogen‐alloyed Ta is a very similar...

G. J. Abbaschian

Papers

The C−Si (Carbon-Silicon) system

The Ge−Si (Germanium-Silicon) system

The Ge−Sn (Germanium−Tin) system

The Si−Sn (Silicon−Tin) system

The Cu−Si (Copper-Silicon) system