Radiation damage is produced in a crystalline target whenever a moving ion transfers sufficient energy to a target atom to displace it from its lattice site. For conditions of practical importance in ion implantation, the radiation damage produced by the injected ions is severe, and the crystal must be carefully Annealed if the chemical effects of the implanted ions are to dominate the residual damage. The purpose of this paper is to review work that has been performed over the past several years in an effort to understand implantation-produced damage and its annealing characteristics, especially in silicon. The subject is developed as follows. A qualitative description of the damage produced by an implanted ion is presented in Section I, followed by a partial inventory of the basic defects that are found in ion-implanted silicon (Section II). The structure of individual damage clusters produced by both heavy and light ions is then described in Section III, where theoretical predictions are compared to a variety of experimental data. This is followed with a section on the depth distribution of defects and damage clusters (Section IV); and the paper is then concluded with a section on the annealing characteristics of implantation-produced damage (Section V). The development is organized to give primary emphasis to those facts and ideas that are essential for applications of ion implantation in the fabrication of MOS and junction devices in silicon. A future paper will review the state of the art in compound semiconductors.

Ion implantation in semiconductors&#8212;Part II: Damage production and annealing

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing, due to Si interstitials being emitted from the region of the implant damage. The structural source of these interstitials has not previously been identified. Quantitative transmission electron microscopy measurements of extended defects are used to demonstrate that TED is caused by the emission of interstitials from specific defects. The defects are rodlike defects running along 〈110〉 directions, which consist of interstitials precipitating on {311} planes as a single monolayer of hexagonal Si. We correlate the evaporation of {311} defects during annealing at 670 and 815 °C with the length of the diffusion transient, and demonstrate a link between the number of interstitials emitted by the defects, and the flux of interstitials driving TED. Thus not only are {311} defects contributing to the interstitial flux, but the contribution attributable to {311} defect evaporation is sufficient to explain the whole ...

Implantation and transient B diffusion in Si: The source of the interstitials

Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.

Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same

This article provides a comprehensive review of the theory, practice, and application of electron channeling patterns in the scanning electron microscope. An atlas of indexed channeling maps for the bcc, fcc, diamond cubic, and hcp systems is included with a bibliography of 240 references containing all known published work on electron channeling for crystallographic studies in the SEM.

Electron channeling patterns in the scanning electron microscope

Electron diffraction based techniques in scanning electron microscopy of bulk materials

Silicon specimens were irradiated with Ne+, B+, P+ and Sb+ ions. The energy was 80kV, and the doses in the range 1013 to 1016 ions/cm2. The resulting structural damage was investigated by both scanning and transmission electron microscopy. The SEM electron channelling pattern method was used to determine the variation of gross damage with ion type, dose, depth below the surface, and annealing treatment. The TEM method was used to study the detailed nature of the defects formed by the annealing. These included dislocations, rod-like structures, micro-twins, semi-polycrystalline material, misoriented zones, etc. The results are briefly compared with known electrical properties of implanted silicon, and some correlations noted.

Damage produced by ion mplantation in silicon

Electrical, Rutherford backscattering and transmission electron microscopy measurements have been carried out on GaAs samples implanted with 150 keV, 1.10 15 zinc ions/cm 2 and furnace annealed in the temperature range from room temperature to 900°C. A correlation between three types of measurement technique was established and four distinct annealing stages have been identified. For perfect recrystallization and maximum electrical activation an annealing temperature of 900°C is required. The maximum peak hole concentration was in the range 1–2.10 19 holes/cm 3 .

G. R. Booker

Papers

Damage produced by ion mplantation in silicon

Electrical, Rutherford backscattering and transmission electron microscopy studies of furnace annealed zinc implanted GaAs

Correlation between structural and electrical profiles in ion-implanted GaAs

Laser annealing of ion implanted GaAs