In this article, several applications of nanomaterials in food packaging and food safety are reviewed, including: polymer/clay nanocomposites as high barrier packaging materials, silver nanoparticles as potent antimicrobial agents, and nanosensors and nanomaterial-based assays for the detection of food-relevant analytes (gasses, small organic molecules and food-borne pathogens). In addition to covering the technical aspects of these topics, the current commercial status and understanding of health implications of these technologies are also discussed. These applications were chosen because they do not involve direct addition of nanoparticles to consumed foods, and thus are more likely to be marketed to the public in the short term.

Applications of nanotechnology in food packaging and food safety: Barrier materials, antimicrobials and sensors

An apparatus may include a semiconductor chip and a fluidics assembly. The semiconductor chip has an array of wells and an array of sensors and each sensor of the array of sensors is in fluid communication with a well of the array of wells. The fluidics assembly is located on top of the semiconductor chip and is configured to deliver fluids to the semiconductor chip. The fluidics assembly includes a flow expansion chamber configured to introduce the fluids, an outlet portion configured to pipe out the fluids, and a flow chamber portion. The flow chamber portion is configured to allow the fluids to flow from the flow expansion chamber to the outlet portion and to allow the fluids to interact along the way with material in the array of wells. The flow expansion chamber has a curved wall at the top or bottom so that the height of the flow expansion chamber at the center is less than at the walls that restrict the fluids to the left and right.

Methods and apparatus for measuring analytes using large scale fet arrays

Methods and apparatus relating to FET arrays including large FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.

Methods and apparatus for measuring analytes

We might be at the turning point where research in microfluidics undertaken in academia and industrial research laboratories, and substantially sponsored by public grants, may provide a range of portable and networked diagnostic devices. In this Progress Report, an overview on microfluidic devices that may become the next generation of point-of-care (POC) diagnostics is provided. First, we describe gaps and opportunities in medical diagnostics and how microfluidics can address these gaps using the example of immunodiagnostics. Next, we conceptualize how different technologies are converging into working microfluidic POC diagnostics devices. Technologies are explained from the perspective of sample interaction with components of a device. Specifically, we detail materials, surface treatment, sample processing, microfluidic elements (such as valves, pumps, and mixers), receptors, and analytes in the light of various biosensing concepts. Finally, we discuss the integration of components into accurate and reliable devices.

Microfluidic Chips for Point‐of‐Care Immunodiagnostics

Methods and apparatuses relating to large scale FET arrays for analyte detection and measurement are provided. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes.

Methods and apparatus for detecting molecular interactions using FET arrays

Nanowire-transistor based ultra-sensitive DNA methylation detection

Nanowire field effect transistors (nano-FET) were lithographically fabricated using 50 nm doped polysilicon nanowires attached to two small gold terminals separated from each other by a ∼150 nm gap to serve as the basis for electronic detection of bacteria toxins. The device characterizations, semiconducting properties and use in a robust and sensitive bio-molecular detection sensor of bacterial toxins were reported in this work. The device characteristics were demonstrated with varying gate and drain voltages. The bio-molecular detection was demonstrated using electrochemical impedance spectroscopy (EIS), using Staphylococcus aureus Enterotoxin B (SEB) as the target molecule. The detection limit of SEB was observed in the range of 10–35 fM.

Ultra-sensitive detection of bacterial toxin with silicon nanowire transistor

A Galois Field error correction decoder is described which can correct an error in a received polynomial. The apparatus includes means for generating a plurality of syndrome polynomials. A magnitude polynomial and a location polynomial having a first derivative are calculated from the syndrome polynomials utilizing Euclid's Algorithm. The module utilizing Euclid's Algorithm includes a general Galois Field multiplier having combinational logic circuits. The magnitude polynomial is divided by the first derivative of said location polynomial to form a quotient. Preferrably the division includes finding the inverse of the first derivative and multiplying the inverse by the magnitude polynomial. The error is corrected by exclusive ORing the quotient with the received polynomial.

High-speed real-time Reed-Solomon decoder

A method for designing and constructing pass transistor asynchronous sequential circuits, and a class of pass transis tor asynchronous sequential circuits designed in accordance with the inventive method. The inventive circuit design method generates a design for each next state variable, Yi, of an asynchronous pass transistor circuit, where each design corresponds to a portion of the circuit. In a first preferred embodiment, the invention produces an asynchronous circuit design comprising a pass transistor network and a buffer (having no long term memory) for receiving the output of the pass transistor network. In a second preferred embodiment, the inventive method results in a critical race free, asynchronous circuit design comprising an enable pass transistor network, a disable pass transistor network, and a buffer (including a memory) for receiving the output of both pass transistor networks. In either embodiment, the invention results in circuits comprising pass transistor networks that are identical in structure for each next state variable Yi (although different sets of constant input signals are applied to each network). It is within the scope of the invention to design and construct circuits having this architecture in accordance with a structured layout including an input section, a logic section implementing the next state functions, a buffer section, and a feedback section. The logic section preferably includes a pass transistor matrix programmed with either a diffusion-contact-metal transistor structure or a metal jumper structure. The feedback lines preferably are metal lines that are programmed by making contact with the gate lines feeding the pass transistors.

Method for designing pass transistor asynchronous sequential circuits

A CMOS circuit formed in a semiconductor substrate having improved immunity to total ionizing dose radiation, improved immunity to radiation induced latch up, and improved immunity to a single event upset. The architecture of the present invention can be utilized with the n-well, p-well, or dual-well processes. For example, a preferred embodiment of the present invention is described relative to a p-well process wherein the p-well is formed in an n-type substrate. A network of NMOS transistors is formed in the p-well, and a network of PMOS transistors is formed in the n-type substrate. A contact is electrically coupled to the p-well region and is coupled to first means for independently controlling the voltage in the p-well region. Another contact is electrically coupled to the n-type substrate and is coupled to second means for independently controlling the voltage in the n-type substrate. By controlling the p-well voltage, the effective threshold voltages of the n-channel transistors both drawn and parasitic can be dynamically tuned. Likewise, by controlling the n-type substrate, the effective threshold voltages of the p-channel transistors both drawn and parasitic can also be dynamically tuned. Preferably, by optimizing the threshold voltages of the n-channel and p-channel transistors, the total ionizing dose radiation effect will be neutralized and lower supply voltages can be utilized for the circuit which would result in the circuit requiring less power.

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Gary K. Maki

Papers

Nanowire-transistor based ultra-sensitive DNA methylation detection

Ultra-sensitive detection of bacterial toxin with silicon nanowire transistor

High-speed real-time Reed-Solomon decoder

Method for designing pass transistor asynchronous sequential circuits

Radiation tolerant back biased CMOS VLSI