Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.

Photosensitive imaging devices and associated methods

In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

Silicon-based visible and near-infrared optoelectric devices

Integrated circuit ( 1 ) comprising:
 an array of single photon avalanche diodes (SPADs), a plurality of read-out circuits, each SPADs being coupled to one read-out circuit, wherein at least some of the read-out circuits comprise time-to-digital converters (TDC) and/or a digital asynchronous counter, wherein a plurality of SPADs are coupled to one single read-out circuit The read-out circuit may comprise a transformer for decoupling the SPAD from other parts of said read-out circuit

Integrated circuit comprising an array of single photon avalanche diodes

The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Femtosecond Laser-Induced Formation Of Submicrometer Spikes On A Semiconductor Substrate

An avalanche photodiode has a light receiving part capable of producing an avalanche phenomenon, a carrier storage part for storing photo signal carriers that are avalanche-multiplied in the light receiving part, and a reader for reading the photo carriers from the carrier storage part, characterized by a controller, interposed between the light receiving part and the carrier storage part, for controlling an electric field applied to the light receiving part. Also, a signal processor has a plurality of avalanche photodiodes described above, characterized by an avalanche photodiode including a shift register for driving the leader.

Signal processor having avalanche photodiodes

A wafer of neutron transmutation doped silicon having a pn junction between extended opposite surfaces is formed with bevelled edges. A plurality of reverse biased signal contacts is disposed on one surface to provide an integrated array of avalanche photodiodes.

Gerald C. Huth

Papers

Silicon avalanche photodiode array