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Gerald R. Dubois

Researcher at University of Toronto

Publications -  6
Citations -  140

Gerald R. Dubois is an academic researcher from University of Toronto. The author has contributed to research in topics: Electric charge & Kapton. The author has an hindex of 5, co-authored 6 publications receiving 138 citations.

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Journal ArticleDOI

Surface Discharges on Teflon, Mylar and Kapton

TL;DR: In this paper, Teflon, Mylar and Kapton H are compared from the point of view of charged-area scaling of discharge current pulse properties, and the experimental observations are used to motivate a theory of discharge arc propagation in which the propagation velocity is controlled by the rate of removal of excess charge via wave propagation along a filamentary tunnel filled with an overdense plasma.
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Application of Ring‐Opened Poly(ferrocene)s as Protective Charge Dissipation Coatings for Dielectrics

TL;DR: In this article, a robust polymeric charge dissipation coating was proposed to remove or prevent the formation of any accumulated charge on the surface of dielectrics of a satellite's thermal blankets, cable coatings and microelectronic devices.
Patent

Satellite charge monitor

TL;DR: In this article, the authors presented a charge monitor for satellites for monitoring build up of electric charge due to charge particle fluxes impinging on the satellite, where an electrically conducting electrode is embedded in each dielectric slab a preselected distance below a top surface of the dielectra.
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Thickness Scaling for ARC Discharges on Electron-Beam-Charged Dielectrics

TL;DR: In this paper, a study of arc discharges on various thicknesses of electron-beam-charged Mylar, FEP Teflon and Kapton was conducted, showing that the peak substrate current and the energy dissipated in a load resistor both exhibit maxima at a particular thickness of the order of 50?m, for one set of experiment parameters.
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Polyferrocenylsilanes as Protective Charge Migration Coatings for Dielectrics

TL;DR: In this paper, the authors investigated the charge migration properties of polyferrocenylsilanes and showed that even after a 1-h exposure to a 25-kV electron flux, no appreciable charge accumulation existed.