A second-generation potential energy function for solid carbon and hydrocarbon molecules that is based on an empirical bond order formalism is presented. This potential allows for covalent bond breaking and forming with associated changes in atomic hybridization within a classical potential, producing a powerful method for modelling complex chemistry in large many-atom systems. This revised potential contains improved analytic functions and an extended database relative to an earlier version (Brenner D W 1990 Phys. Rev. B 42 9458). These lead to a significantly better description of bond energies, lengths, and force constants for hydrocarbon molecules, as well as elastic properties, interstitial defect energies, and surface energies for diamond.

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A second-generation reactive empirical bond order (REBO) potential energy expression for hydrocarbons

The phenomenal rate of increase in the integration density of silicon chips has been sustained in large part by advances in optical lithography--the process that patterns and guides the fabrication of the component semiconductor devices and circuitry. Although the introduction of shorter-wavelength light sources and resolution-enhancement techniques should help maintain the current rate of device miniaturization for several more years, a point will be reached where optical lithography can no longer attain the required feature sizes. Several alternative lithographic techniques under development have the capability to overcome these resolution limits but, at present, no obvious successor to optical lithography has emerged.

Pushing the limits of lithography

Surface Chemistry of Ruthenium Dioxide in Heterogeneous Catalysis and Electrocatalysis: From Fundamental to Applied Research

Cubic boron nitride (cBN) has a number of highly desirable mechanical, thermal, electrical, and optical properties. Because of this, there has been an extensive worldwide effort to synthesize thin films of cBN. Film synthesis is difficult in that without significant levels of ion bombardment during growth, only sp2-bonded BN forms, not sp3-bonded cBN. Recently there has been considerable progress in improving the deposition techniques and cBN film quality. In addition, progress has been made in understanding how energetic deposition conditions can lead to cBN formation. However, unanswered questions remain and process improvements are still needed. In this paper we critically and comprehensively review recent developments in cBN film synthesis and characterization. First, the structures and stability of the BN phases and characterization techniques are described. Next, the key experimental parameters controlling cBN film formation and synthesis techniques are discussed. Following a review of microstructure, the proposed mechanisms of cBN formation and the observed mechanical and electrical properties of cBN films are analyzed. We conclude by highlighting the current impediments to the practical realization of cBN-film technology.

/pdf/review-of-advances-in-cubic-boron-nitride-film-synthesis-29xsb46ct5.pdf

Review of advances in cubic boron nitride film synthesis

Ionizing radiation has been found to be widely applicable in modifying the structure and properties of polymers, and can be used to tailor the performance of either bulk materials or surfaces. Fifty years of research in polymer radiation chemistry has led to numerous applications of commercial and economic importance, and work remains active in the application of radiation to practical uses involving polymeric materials. This paper provides a survey of radiation-processing methods of industrial interest, ranging from technologies already commercially well established, through innovations in the active R&D stage which show exceptional promise for future commercial use. Radiation-processing technologies are discussed under the following categories: cross-linking of plastics and rubbers, curing of coatings and inks, heat-shrink products, fiber–matrix composites, chain-scission for processing control, surface modification, grafting, hydrogels, sterilization, natural product enhancement, plastics recycling, ceramic precursors, electronic property materials, ion-track membranes and lithography for microdevice production. In addition to new technological innovations utilizing conventional gamma and e-beam sources, a number of promising new applications make use of novel radiation types which include ion beams (heavy ions, light ions, highly focused microscopic beams and high-intensity pulses), soft X-rays which are focused, coherent X-rays (from a synchrotron) and e-beams which undergo scattering to generate patterns.

High-energy radiation and polymers: A review of commercial processes and emerging applications

Hydrogen chemisorption and the structure of the diamond C(100)-(2 × 1) surface

The role of hydrogen on the diamond C(111)−(2 × 1) reconstruction

An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

Extreme ultraviolet lithography machine

A normally unoccupied electronic state on the reconstructed (2\ifmmode\times\else\texttimes\fi{}1) surface of C(111) (diamond) is characterized with angle-resolved two-photon photoelectron spectroscopy. The state is seen in the bulk band gap, lying 4.8 eV above the valence-band maximum. Comparison between the measured dispersion of this band and published theoretical band-structure calculations supports a relaxed Pandey \ensuremath{\pi}-bonded chain model of the surface reconstruction.

Normally unoccupied states on C(111) (diamond) (2 x 1): Support for a relaxed pi -bonded chain model.

The authors report on the development of a high power laser plasma Extreme Ultraviolet (EUV) source for Extreme Ultraviolet Lithography. The source is based on the plasma emission of a recycled jet beam of large Xe clusters and produces no particulate debris. The source will be driven by a pulsed laser delivering 1,500 W of focused average power to the cluster jet target. To develop condensers and to optimize source performance, a low power laboratory cluster jet prototype has been used to study the spectroscopy, angular distributions, and EUV source images of the cluster jet plasma emission. In addition, methods to improve the reflectance lifetimes of nearby plasma facing condenser mirrors have been developed. The resulting source yields EUV conversion efficiencies up to 3.8% and mirror lifetimes of 10{sup 9} plasma pulses.

/pdf/high-power-extreme-ultraviolet-source-based-on-gas-jets-51q1508p2i.pdf

Glenn D. Kubiak

Papers

Hydrogen chemisorption and the structure of the diamond C(100)-(2 × 1) surface

The role of hydrogen on the diamond C(111)−(2 × 1) reconstruction

Extreme ultraviolet lithography machine

Normally unoccupied states on C(111) (diamond) (2 x 1): Support for a relaxed pi -bonded chain model.

High-power extreme-ultraviolet source based on gas jets