Showing papers by "Guy Beaucarne published in 2010"
TL;DR: In this paper, the seed layers were made using implant-induced separation and anodic bonding, and these layers were then epitaxially thickened by thermal CVD, achieving efficiencies of up to 7.5%.
39 citations
TL;DR: In this article, solar cell processes are established integrating both a two-step CVD grown emitter, and state-of-the-art concepts for optical light trapping in epitaxial cells.
30 citations
TL;DR: In this paper, an n + n-type polycrystalline silicon (poly-Si) films were obtained on alumina substrates by combining the aluminium induced crystallization (AIC) process of amorphous silicon and chemical vapour deposition (LPCVD) at high temperature (1000°C) for the epitaxial thickening.
26 citations
Patent•
31 Aug 2010TL;DR: In this article, a method for producing a thin substrate with a thickness below 750 microns, comprising providing a mother substrate, the mother substrate having a first main surface and a toughness, inducing a stress with predetermined stress profile in at least a portion of the mother, said portion comprising the thin substrate, being locally larger than the toughness of the substrate at a first depth under the main surface.
Abstract: A method is provided for producing a thin substrate with a thickness below 750 microns, comprising providing a mother substrate, the mother substrate having a first main surface and a toughness; inducing a stress with predetermined stress profile in at least a portion of the mother substrate, said portion comprising the thin substrate, the induced stress being locally larger than the toughness of the mother substrate at a first depth under the main surface; such that the thin substrate is released from the mother substrate, wherein the toughness of the mother substrate at the first depth is not lowered prior to inducing the stress. The method can be used in the production of, for example, solar cells.